BF245B ,N-Channel RF AmplifierBF245A/BF245B/BF245CBF245A/BF245B/BF245CN-Channel Amplifiers• This device is designed for VHF/UHF a ..
BF245B ,N-Channel RF Amplifier
BF245C ,N-Channel RF Amplifier
BF245C ,N-Channel RF AmplifierBF245A/BF245B/BF245CBF245A/BF245B/BF245CN-Channel Amplifiers• This device is designed for VHF/UHF a ..
BF245C ,N-Channel RF Amplifier
BF246A ,N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS
BR9010 , 1, 2, and 4k bit EEPROMs for direct connection to serial ports
BR9010 , 1, 2, and 4k bit EEPROMs for direct connection to serial ports
BR9010FV , 1, 2, and 4k bit EEPROMs for direct connection to serial ports
BR9016RFV , 8k, 16k bit EEPROMs for direct connection to serial ports
BR9040F , 1, 2, and 4k bit EEPROMs for direct connection to serial ports
BR9080ARFV-W , 8k, 16k bit EEPROMs for direct connection to serial ports
BF245B
N-Channel RF Amplifier
BF245A/BF245B/BF245C BF245A/BF245B/BF245C N-Channel Amplifiers • This device is designed for VHF/UHF amplifiers. • Sourced from process 50. TO-92 GS D Absolute Maximum Ratings T =25°C unless otherwise noted C Symbol Parameter Value Units V Drain-Gate Voltage 30 V DG V Gate-Source Voltage 30 V GS I Forward Gate Current 10 mA GF P Total Device Dissipation @T =25°C 350 mW D A Derate above 25°C 2.8 mW/°C T T Operating and Storage Junction Temperature Range - 55 ~ 150 °C J, STG Electrical Characteristics T =25°C unless otherwise noted C Symbol Parameter Test Condition Min. Typ. Max. Units Off Characteristics V Gate-Source Breakdown Voltage V = 0, I = 1μA30 V (BR)GSs DS G V Gate-Source BF245A V = 15V, I = 200μA0.4 2.2 V GS DS D BF245B 1.6 3.8 BF245C 3.2 7.5 V (off) Gate-Source Cut-off Voltage V = 15V, I = 10nA -0.5 -8 V GS DS D I Gate Reverse Current V = 20V, V = 0 5 nA GSS GS GS On Characteristics I Zero-Gate Voltage Drain Current DSS BF245A V = 15V, V = 0 2 6.5 mA GS GS BF245B 6 15 BF245C 12 25 On Characteristics g Common Source Forward V = 15V, V = 0, f = 1KHz 3 6.5 m fs GS GS Transconductance ©2002 Rev. A, March 2002 Ω
