BF1214 Fast Delivery |IC PHOENIX CO.,LIMITED

BF1214 ,Dual N-channel dual-gate MOSFETapplications with 5 V supplyvoltageu digital and analog television tunersu professional communicati ..
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BF1214
Dual N-channel dual-gate MOSFET
Product proﬁle1.1 General description
The BF1214 is a combination of two dual gate MOSFET ampliﬁers with shared source
and gate2 leads.
The source and substrate are interconnected. Internal bias circuits enable stabilization and a very good cross modulation performance during AGC. Integrated
diodes between the gates and source protect against excessive input voltage surges. The
transistor has a SOT363 micro-miniature plastic package.
1.2 Features Two low noise gain controlled ampliﬁers in a single package; both with a partly
integrated bias Superior cross modulation performance during AGC High forward transfer admittance High forward transfer admittance to input capacitance ratio Both ampliﬁers optimized for VHF applications, yet suitable for VHF and UHF
applications
1.3 Applications Gain controlled low noise ampliﬁers for VHF and UHF applications with 5 V supply
voltage digital and analog television tuners professional communication equipment
BF1214
Dual N-channel dual gate MOSFET
Rev. 01 — 30 October 2007 Product data sheet
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
NXP Semiconductors BF1214
Dual N-channel dual gate MOSFET
1.4 Quick reference data
[1] Tsp is the temperature at the soldering point of the source lead.
[2] Calculated from S-parameters.
[3] Measured in Figure 24 test circuit. Pinning information Ordering information
Table 1. Quick reference data for ampliﬁer A and B
VDS drain-source voltage DC - - 6 V drain current DC - - 30 mA
Ptot total power dissipation Tsp≤ 107°C [1]- - 180 mW
|yfs| forward transfer admittance f = 100 MHz; Tj =25 °C; =18mA 32 37 mS
Ciss(G1) input capacitance at gate1 f= 100 MHz [2]- 2.2 2.7 pF
Crss reverse transfer capacitancef= 100 MHz [2] -20 - fF noise ﬁgure f= 400 MHz; YS =YS(opt) - 0.9 1.5 dB= 800 MHz; YS =YS(opt) - 1.2 1.8 dB
Xmod cross modulation input level for k= 1 % atdB AGC; fw=50 MHz;
funw =60MHz
[3] 102 105- dBμV junction temperature - - 150 °C
Table 2. Discrete pinning drain (AMP A) source drain (AMP B) gate1 (AMP B) gate2 gate1 (AMP A)
sym119
G1A
G1B
Table 3. Ordering information
BF1214 - plastic surface-mounted package; 6 leads SOT363
NXP Semiconductors BF1214
Dual N-channel dual gate MOSFET Marking Limiting values
[1] Tsp is the temperature at the soldering point of the source lead.
Table 4. Marking
BF1214 SB* * = p : made in Hong Kong
* = t : made in Malaysia
* = w : made in China
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Per MOSFET
VDS drain-source voltage DC - 6 V drain current DC - 30 mA
IG1 gate1 current - ±10 mA
IG2 gate2 current - ±10 mA
Ptot total power dissipation Tsp≤ 107°C [1]- 180 mW
Tstg storage temperature −65 +150 °C junction temperature - 150 °C
NXP Semiconductors BF1214
Dual N-channel dual gate MOSFET Thermal characteristics Static characteristics
[1] RG1 connects gate1 to VGG = 5 V.
Table 6. Thermal characteristics
Rth(j-sp) thermal resistance from junction to solder point 240 K/W
Table 7. Static characteristics =25 °C.
Per MOSFET; unless otherwise speciﬁed
V(BR)DSS drain-source breakdown voltage VG1-S =VG2-S =0V; ID =10μA
ampliﬁer A 6 - - V
ampliﬁer B 6 - - V
V(BR)G1-SS gate1-source breakdown voltage VG2-S =VDS =0V; IG1-S =10mA 6 - 10 V
V(BR)G2-SS gate2-source breakdown voltage VG1-S =VDS =0V; IG2-S =10mA 6 - 10 V
VF(S-G1) forward source-gate1 voltage VG2-S =VDS =0V; IS-G1=10 mA 0.5 - 1.5 V
VF(S-G2) forward source-gate2 voltage VG1-S =VDS =0V; IS-G2=10 mA 0.5 - 1.5 V
VG1-S(th) gate1-source threshold voltage VDS =5V; VG2-S =4V; ID= 100μA 0.3 - 1.0 V
VG2-S(th) gate2-source threshold voltage VDS =5V; VG1-S =5V; ID= 100μA 0.4 - 1.0 V
IDS drain-source current VG2-S =4V [1]
ampliﬁer A; VDS(A) =5V; RG1(A) =68kΩ 13 - 23 mA
ampliﬁer B; VDS(B) =5V; RG1(B) =68kΩ 13 - 23 mA
IG1-S gate1 cut-off current VG2-S =0V; VDS(A) =VDS(B) =0V
ampliﬁer A; VG1-S(A) =5V - - 50 nA
ampliﬁer B; VG1-S(B) =5V - - 50 nA
IG2-S gate2 cut-off current VG2-S =4V; VDS(A) =VDS(B) =0V;
VG1-S(A) =VG1-S(B) =0V - 20 nA
NXP Semiconductors BF1214
Dual N-channel dual gate MOSFET Dynamic characteristics
[1] Calculated from S-parameters.
[2] Measured in Figure 24 test circuit.
Table 8. Dynamic characteristics for ampliﬁer A and B
Common source; Tamb =25 °C; VG2-S =4V; VDS =5V; ID=18 mA.
|yfs| forward transfer admittancef= 100 MHz; Tj =25 °C27 32 37 mS
Ciss(G1) input capacitance at gate1 f= 100 MHz [1]- 2.2 2.7 pF
Ciss(G2) input capacitance at gate2 f= 100 MHz [1]- 3.5 - pF
Coss output capacitance f= 100 MHz [1]- 0.8 - pF
Crss reverse transfer capacitancef= 100 MHz [1] -20 - fF
Gtr transducer power gain ampliﬁer A; BS =BS(opt); BL =BL(opt) [1]= 200 MHz; GS=2 mS; GL= 0.5 mS 31 35 39 dB= 400 MHz; GS=2 mS; GL=1 mS 27 31 35 dB= 800 MHz; GS= 3.3 mS; GL =1mS 22 26 30 dB
ampliﬁer B; BS =BS(opt); BL =BL(opt) [1]= 200 MHz; GS=2 mS; GL= 0.5 mS 31 35 39 dB= 400 MHz; GS=2 mS; GL=1 mS 29 33 37 dB= 800 MHz; GS= 3.3 mS; GL =1mS 25 29 33 dB noise ﬁgure f=11 MHz; GS=20 mS; BS= 0 S - 3.0 - dB= 400 MHz; YS =YS(opt) - 0.9 1.5 dB= 800 MHz; YS =YS(opt) - 1.2 1.8 dB
Xmod cross modulation input level for k= 1 %; fw=50 MHz;
funw =60MHz
[2]0 dB AGC 90 - - dBμV10 dB AGC - 94 - dBμV20 dB AGC - 99 - dBμV40 dB AGC 102 105 - dBμV
NXP Semiconductors BF1214
Dual N-channel dual gate MOSFET
8.1 Graphs for ampliﬁer A and B
NXP Semiconductors BF1214
Dual N-channel dual gate MOSFET
NXP Semiconductors BF1214
Dual N-channel dual gate MOSFET
NXP Semiconductors BF1214
Dual N-channel dual gate MOSFET
8.2 Graphs for ampliﬁer A

Partno	Mfg	Dc	Qty	Available	Descript
BF1214	NXP	N/a	2170	avai	Dual N-channel dual-gate MOSFET