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BF1210
Dual N-channel dual-gate MOSFET
Product proﬁle1.1 General description
The BF1210 is a combination of two dual gate MOSFET ampliﬁers with shared source
and gate2 leads.
The source and substrate are interconnected. Internal bias circuits enable stabilization and a very good cross modulation performance during AGC. Integrated
diodes between the gates and source protect against excessive input voltage surges. The
transistor has a SOT363 micro-miniature plastic package.
1.2 Features Two low noise gain controlled ampliﬁers in a single package; both with a partly
integrated bias Superior cross modulation performance during AGC High forward transfer admittance High forward transfer admittance to input capacitance ratio
1.3 Applications Gain controlled low noise ampliﬁers for VHF and UHF applications with 5 V supply
voltage digital and analog television tuners professional communication equipment
BF1210
Dual N-channel dual gate MOSFET
Rev. 01 — 25 October 2006 Product data sheet
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
NXP Semiconductors BF1210
Dual N-channel dual gate MOSFET
1.4 Quick reference data
[1] Tsp is the temperature at the soldering point of the source lead.
[2] Calculated from S-parameters. Pinning information Ordering information
Table 1. Quick reference data
Per MOSFET unless otherwise speciﬁed.
VDS drain-source voltage - - 6 V drain current DC - - 30 mA
Ptot total power dissipation Tsp≤ 107°C [1]- - 180 mW
|yfs| forward transfer admittance ampliﬁer A; ID =19mA 26 31 41 mS
ampliﬁer B; ID =13mA 28 33 43 mS
Ciss(G1) input capacitance at gate1 f= 100 MHz [2]
ampliﬁer A - 2.2 2.7 pF
ampliﬁer B - 1.9 2.4 pF
Crss reverse transfer capacitancef= 100 MHz [2] -20 - fF noise ﬁgure ampliﬁer A; f= 400 MHz - 0.9 1.5 dB
ampliﬁer B; f= 800 MHz - 1.2 1.9 dB
Xmod cross modulation input level for k= 1 % atdB AGC
ampliﬁer A 100 105- dBμV
ampliﬁer B 100 103- dBμV junction temperature - - 150 °C
Table 2. Discrete pinning gate1 (AMP A) gate2 gate1 (AMP B) drain (AMP B) source drain (AMP A)
sym119
G1A
G1B
Table 3. Ordering information
BF1210 - plastic surface-mounted package; 6 leads SOT363
NXP Semiconductors BF1210
Dual N-channel dual gate MOSFET Marking Limiting values
[1] Tsp is the temperature at the soldering point of the source lead.
Table 4. Marking
BF1210 *AB * = p : made in Hong Kong
* = t : made in Malaysia
* = w : made in China
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Per MOSFET
VDS drain-source voltage - 6 V drain current DC - 30 mA
IG1 gate1 current - ±10 mA
IG2 gate2 current - ±10 mA
Ptot total power dissipation Tsp≤ 107°C [1]- 180 mW
Tstg storage temperature −65 +150 °C junction temperature - 150 °C
NXP Semiconductors BF1210
Dual N-channel dual gate MOSFET Thermal characteristics Static characteristics
[1] RG1 connects gate1 to VGG = 5 V. See Figure32. Dynamic characteristics
8.1 Dynamic characteristics for ampliﬁer A
Table 6. Thermal characteristics
Rth(j-sp) thermal resistance from junction to solder point 240 K/W
Table 7. Static characteristics =25 °C.
Per MOSFET; unless otherwise speciﬁed
V(BR)DSS drain-source breakdown voltage VG1-S =VG2-S =0V; ID =10μA
ampliﬁer A 6 - - V
ampliﬁer B 6 - - V
V(BR)G1-SS gate1-source breakdown voltage VG2-S =VDS =0V; IG1-S =10mA 6 - 10 V
V(BR)G2-SS gate2-source breakdown voltage VG1-S =VDS =0V; IG2-S =10mA 6 - 10 V
VF(S-G1) forward source-gate1 voltage VG2-S =VDS =0V; IS-G1=10 mA 0.5 - 1.5 V
VF(S-G2) forward source-gate2 voltage VG1-S =VDS =0V; IS-G2=10 mA 0.5 - 1.5 V
VG1-S(th) gate1-source threshold voltage VDS =5V; VG2-S =4V; ID= 100μA 0.3 - 1.0 V
VG2-S(th) gate2-source threshold voltage VDS =5V; VG1-S =5V; ID= 100μA 0.4 - 1.0 V
IDS drain-source current VG2-S =4V [1]
ampliﬁer A; VDS(A) =5V; RG1(A) =59kΩ 14 - 24 mA
ampliﬁer B; VDS(B) =5V; RG1(B)= 150kΩ 9 - 17 mA
IG1-S gate1 cut-off current VG2-S =0V; VDS(A) =VDS(B) =0V
ampliﬁer A; VG1-S(A) =5V - - 50 nA
ampliﬁer B; VG1-S(B) =5V - - 50 nA
IG2-S gate2 cut-off current VG2-S =4V; VDS(A) =VDS(B) =0V;
VG1-S(A) =VG1-S(B) =0V - 20 nA
Table 8. Dynamic characteristics for ampliﬁer A
Common source; Tamb =25 °C; VG2-S =4V; VDS(A) =5V; ID(A) =19mA.
|yfs| forward transfer admittance Tj =25 °C26 31 41 mS
Ciss(G1) input capacitance at gate1 f= 100 MHz [1]- 2.2 2.7 pF
Ciss(G2) input capacitance at gate2 f= 100 MHz [1]- 3.0 - pF
Coss output capacitance f= 100 MHz [1]- 0.9 - pF
Crss reverse transfer capacitancef= 100 MHz [1] -20 - fF
NXP Semiconductors BF1210
Dual N-channel dual gate MOSFET
[1] Calculated from S-parameters.
[2] Measured in Figure 32 test circuit.
Gtr transducer power gain BS =BS(opt); BL =BL(opt) [1]= 200 MHz; GS=2 mS; GL= 0.5 mS 31 35 39 dB= 400 MHz; GS=2 mS; GL=1 mS 27 31 35 dB= 800 MHz; GS= 3.3 mS; GL =1mS 22 26 30 dB noise ﬁgure f=11 MHz; GS=20 mS; BS= 0 S - 3 - dB= 400 MHz; YS =YS(opt) - 0.9 1.5 dB= 800 MHz; YS =YS(opt) - 1.2 1.9 dB
Xmod cross modulation input level for k= 1 %; fw=50 MHz;
funw =60MHz
[2]0 dB AGC 90 - - dBμV10 dB AGC - 90 - dBμV20 dB AGC - 99 - dBμV40 dB AGC 100 105 - dBμV
Table 8. Dynamic characteristics for ampliﬁer A …continued
Common source; Tamb =25 °C; VG2-S =4V; VDS(A) =5V; ID(A) =19mA.
NXP Semiconductors BF1210
Dual N-channel dual gate MOSFET
8.1.1 Graphs for ampliﬁer A
NXP Semiconductors BF1210
Dual N-channel dual gate MOSFET
NXP Semiconductors BF1210
Dual N-channel dual gate MOSFET
NXP Semiconductors BF1210
Dual N-channel dual gate MOSFET
NXP Semiconductors BF1210
Dual N-channel dual gate MOSFET
NXP Semiconductors BF1210
Dual N-channel dual gate MOSFET
8.1.2 Scattering parameters for ampliﬁer A
8.2 Noise data for ampliﬁer A
8.3 Dynamic characteristics for ampliﬁer B
Table 9. Scattering parameters for ampliﬁer A
VDS(A) =5V; VG2-S =4V; ID(A)=19 mA; VDS(B) =0V;VG1-S(B) =0V; Tamb =25 °C; typical values. 0.9861 −3.2 3.14 176.75 0.00054 87.97 0.9934 −1.19
100 0.9883 −7.84 3.14 171.53 0.00104 87.69 0.9925 −2.85
200 0.9844 −15.7 3.12 163.1 0.00205 80.77 0.9918 −5.69
300 0.9761 −23.52 3.08 154.65 0.00295 76.33 0.9904 −8.51
400 0.9635 −31.26 3.03 146.33 0.00375 72.34 0.9888 −11.33
500 0.9486 −38.78 2.97 138.15 0.00437 67.97 0.9870 −14.13
600 0.9305 −46.2 2.90 130.12 0.00483 64.86 0.9847 −16.87
700 0.9105 −53.33 2.81 122.26 0.0051 62.13 0.9832 −19.61
800 0.8911 −60.2 2.73 114.65 0.0052 59.88 0.9817 −22.35
900 0.8723 −67.03 2.65 107.2 0.00515 58.8 0.9796 −25.03
1000 0.8521 −73.74 2.56 99.78 0.00498 58.03 0.9785 −27.08
Table 10. Noise data for ampliﬁer A
VDS(A) =5V; VG2-S =4V; ID(A)=19 mA, Tamb =25 °C; typical values.
400 0.9 0.749 23.7 0.667
800 1.2 0.688 48.65 0.583
Table 11. Dynamic characteristics for ampliﬁer B
Common source; Tamb =25 °C; VG2-S =4V; VDS(B) =5V; ID(B) =13mA.
|yfs| forward transfer admittance Tj =25 °C28 33 43 mS
Ciss(G1) input capacitance at gate1 f= 100 MHz [1]- 1.9 2.4 pF
Ciss(G2) input capacitance at gate2 f= 100 MHz [1]- 3.4 - pF
Coss output capacitance f= 100 MHz [1]- 0.85 - pF
Crss reverse transfer capacitancef= 100 MHz [1] -20 - fF
Gtr transducer power gain BS =BS(opt); BL =BL(opt) [1]= 200 MHz; GS=2 mS; GL= 0.5 mS 32 36 40 dB= 400 MHz; GS=2 mS; GL=1 mS 29 33 37 dB= 800 MHz; GS= 3.3 mS; GL =1mS 27 31 35 dB noise ﬁgure f=11 MHz; GS=20 mS; BS =0S - 4 - dB= 400 MHz; YS =YS(opt) - 0.9 1.5 dB= 800 MHz; YS =YS(opt) - 1.2 1.9 dB

Partno	Mfg	Dc	Qty	Available	Descript
BF1210	NXP	N/a	9000	avai	Dual N-channel dual-gate MOSFET