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BF1105RNXP/PHILIPSN/a29000avaiN-channel dual-gate MOSFET
BF1105WRNXPN/a10000avaiN-channel dual-gate MOSFET


BF1105R ,N-channel dual-gate MOSFETFEATURES PINNING Short channel transistor with high PIN DESCRIPTIONhandbook, 2 columns 3 4forward ..
BF1105WR ,N-channel dual-gate MOSFET
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BF1105R-BF1105WR
N-channel dual-gate MOSFET

NXP Semiconductors Product specification
N-channel dual-gate MOS-FETs BF1105; BF1105R;
BF1105WR
FEATURES
Short channel transistor with high
forward transfer admittance to input
capacitance ratio Low noise gain controlled amplifier
up to 1 GHz. Internal self-biasing circuit to
ensure good cross-modulation
performance during AGC and good
DC stabilization.
APPLICATIONS
VHF and UHF applications with 5V
supply voltage, such as television
tuners and professional
communications equipment.
DESCRIPTION

Enhancement type N-channel
field-effect transistor with source and
substrate interconnected. Integrated
diodes between gates and source
protect against excessive input
voltage surges. The BF1105,
BF1105R and BF1105WR are
encapsulated in the SOT143B,
SOT143R and SOT343R plastic
packages respectively.
PINNING
QUICK REFERENCE DATA
NXP Semiconductors Product specification
N-channel dual-gate MOS-FETs BF1105; BF1 105R; BF1105WR
NXP Semiconductors Product specification
N-channel dual-gate MOS-FETs BF1105; BF1 105R; BF1105WR
THERMAL CHARACTERISTICS
Note
Device mounted on a printed-circuit board.
STATIC CHARACTERISTICS
=25 C unless otherwise specified.
DYNAMIC CHARACTERISTICS

Common source; Tamb =25 C; VG2-S =4V; VDS=5 V; self-biasing current; unless otherwise specified.
NXP Semiconductors Product specification
N-channel dual-gate MOS-FETs BF1105; BF1 105R; BF1105WR
NXP Semiconductors Product specification
N-channel dual-gate MOS-FETs BF1105; BF1 105R; BF1105WR
NXP Semiconductors Product specification
N-channel dual-gate MOS-FETs BF1105; BF1 105R; BF1105WR
NXP Semiconductors Product specification
N-channel dual-gate MOS-FETs BF1105; BF1 105R; BF1105WR
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