BF1100WR ,Dual-gate MOS-FETapplications such as television tuners andprofessional communications equipment.34DESCRIPTIONg2Enha ..
BF1100WR ,Dual-gate MOS-FET
BF1101WR ,N-channel dual-gate MOSFETLIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 134).SYMBOL PARAMETER CON ..
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BF1102R ,N-channel dual-gate MOSFETapplications1 gate 1 (1) gate 1 (1) Superior cross-modulation performance during AGC2 gate 2 (1 an ..
BF1105 ,N-channel dual-gate MOSFET
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BF1100WR
Dual-gate MOS-FET
Philips Semiconductors
Philips Semiconductors Product specification
Dual-gate MOS-FET BF1100WR
FEATURES Specially designed for use at 9to12 V supply voltage Short channel transistor with high forward transfer
admittance to input capacitance ratio Low noise gain controlled amplifier up to 1 GHz Superior cross-modulation performance during AGC.
APPLICATIONS VHF and UHF applications such as television tuners and
professional communications equipment.
DESCRIPTIONEnhancement type field-effect transistor in a plastic
microminiature SOT343R package. The transistor
consists of an amplifier MOS-FET with source and
substrate interconnected and an internal bias circuit to
ensure good cross-modulation performance during AGC.
PINNING
QUICK REFERENCE DATA
Philips Semiconductors Product specification
Dual-gate MOS-FET BF1100WR
LIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 134).
Note Device mounted on a printed-circuit board.
Philips Semiconductors Product specification
Dual-gate MOS-FET BF1100WR
THERMAL CHARACTERISTICS
Notes Device mounted on a printed-circuit board. Ts is the temperature at the soldering point of the source lead.
STATIC CHARACTERISTICS =25 °C; unless otherwise specified.
Notes RG1 connects gate 1 to VGG=9 V; see Fig.26. RG1 connects gate 1 to VGG=12 V; see Fig.26.
Philips Semiconductors Product specification
Dual-gate MOS-FET BF1100WR
DYNAMIC CHARACTERISTICSCommon source; Tamb =25 °C; VG2-S=4 V; ID=10 mA; unless otherwise specified.
Philips Semiconductors Product specification
Dual-gate MOS-FET BF1100WR
Philips Semiconductors Product specification
Dual-gate MOS-FET BF1100WR
