BF1012S ,Silicon N-Channel MOSFET TetrodeBF1012SSilicon N-Channel MOSFET Tetrode3
BF1012S
Silicon N-Channel MOSFET Tetrode
BF1012S
Silicon N-Channel MOSFET Tetrode For low noise, high gain controlled
input stages up to 1GHz Operating voltage 12V Integrated stabilized bias network
EHA07215
AGCInput
HF Output
+DC
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Maximum Ratings
Thermal ResistanceFor calculation of RthJA please refer to Application Note Thermal Resistance
Note:
It is not recommended to apply external DC-voltage on Gate 1 in active mode.
BF1012S
Electrical Characteristics at TA = 25°C, unless otherwise specified.
DC characteristics
AC characteristics
BF1012S
Total power dissipation Ptot = f (TS)
50
100
150
200
300
tot
Drain current ID = f (VG2S)
10
11
12
15
Forward transfer admittance | Y21 | = f (VG2S)
10
12
14
16
18
20
22
24
28
Insertion power gain | S21 | 2 = f (VG2S)
-65
-60
-55
-50
-45
-40
-35
-30
-25
-20
-15
-10
-5
10
| SBF1012S
Gate 1 input capacitance Cg1ss = f (Vg2s)
f = 200MHz
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
3.0
g1ss
Output capacitance Cdss = f (VG2S)
f = 200MHz
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
3.0
dss
:
www.ic-phoenix.com
.
