| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| BF1005SR E6327 |
Infineon|Infineon |
N/a |
189000 |
 |
|
BF1009 ,Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 9 V Integrated stabilized bias network
BF1009 ,Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 9 V Integrated stabilized bias network
BF1009S ,Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 9V Integrated bias network)BF1009S...Silicon N_Channel MOSFET Tetrode• For low noise, high gain controlled input stage up to ..
BF1012 , Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 12V Integrated stabilized bias network
BF1012 , Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 12V Integrated stabilized bias network
BR24L01AF-W , 128×8 bit electrically erasable PROM
BR24L02FJ-WE2 , High Reliability Series EEPROMs I2C BUS
BR24L02FV-W , 256×8 bit electrically erasable PROM
