BDW93 ,NPN Epitaxial Silicon TransistorBDW93/A/B/CBDW93/A/B/CHammer Drivers, Audio Amplifiers
BDW93 ,NPN Epitaxial Silicon TransistorApplications Power Darlington TR Complement to BDW94, BDW94A, BDW94B and BDW94C respectivelyTO-22 ..
BDW93C ,NPN Epitaxial Silicon TransistorBDW93CBDW94B/BDW94C®COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS■ STMicroelectronics PREFERRE ..
BDW93C. ,NPN Epitaxial Silicon TransistorAPPLICATIONS ■ LINEAR AND SWITCHING INDUSTRIALEQ ..
BDW93CFP ,COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORSAPPLICATIONS ■ LINEAR AND SWITCHING INDUSTRIALT0 ..
BDW93CFP ,COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORSBDW93CFPBDW94CFP®COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS■ STMicroelectronics PREFERREDSA ..
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BDW93
NPN Epitaxial Silicon Transistor
BDW93/A/B/C BDW93/A/B/C Hammer Drivers, Audio Amplifiers Applications Power Darlington TR Complement to BDW94, BDW94A, BDW94B and BDW94C respectively TO-220 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted C Symbol Parameter Value Units V Collector-Base Voltage CBO : BDW93 45 V : BDW93A 60 V : BDW93B 80 V : BDW93C 100 V V Collector-Emitter Voltage CEO : BDW93 45 V : BDW93A 60 V : BDW93B 80 V : BDW93C 100 V I Collector Current (DC) 12 A C I *Collector Current (Pulse) 15 A CP I Base Current 0.2 A B P Collector Dissipation (T =25°C) 80 W C C T Junction Temperature 150 °C J T Storage Temperature - 65 ~ 150 °C STG Thermal Characteristics T =25°C unless otherwise noted C Symbol Parameter Value Units R Thermal Resistance Junction to Case 1.5 °C/W θjc ©2000 Fairchild Semiconductor International Rev. A, February 2000
