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BD791ROHMN/a185avaiNPN complementary plastic silicon power transistor


BD791 ,NPN complementary plastic silicon power transistorTAP , POWER DISSIPATION (WATTS)DOrder this document**by BD791/DSEMICONDUCTOR TECHNICAL DATA** * * * ..
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BD791
NPN complementary plastic silicon power transistor
-.. designed for low power audio amplifier and low–current, high speed switchingapplications. High Collector–Emitter Sustaining Voltage —
VCEO(sus) = 100 Vdc (Min) High DC Current Gain @ IC = 200 mAdc
hFE = 40–250 Low Collector–Emitter Saturation Voltage —
VCE(sat) = 0.5 Vdc (Max) @ IC = 500 mAdc High Current Gain — Bandwidth Product —
fT = 40 MHz (Min) @ IC = 100 mAdc)
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Figure 1. Power Derating

T, TEMPERATURE (°C)
0.8T
, POWER DISSIP
TION (W
TTS)
, POWER DISSIP
TION (W
TTS)
Preferred devices are Motorola recommended choices for future use and best overall value.

SEMICONDUCTOR TECHNICAL DATA
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