BD537J ,NPN Epitaxial Silicon TransistorBD533/535/537BD533/535/537Medium Power Linear and Switching
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BD537J
NPN Epitaxial Silicon Transistor
BD533/535/537 BD533/535/537 Medium Power Linear and Switching Applications Low Saturation Voltage Complement to BD534, BD536 and BD538 respectively TO-220 1 NPN Epitaxial Silicon Transistor 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings T =25°C unless otherwise noted C Symbol Parameter Value Units V Collector-Base Voltage : BD533 45 V CBO : BD535 60 V : BD537 80 V V Collector-Emitter Voltage : BD533 45 V CES : BD535 60 V : BD537 80 V V Collector-Emitter Voltage : BD533 45 V CEO : BD535 60 V : BD537 80 V V Emitter-Base Voltage 5 V EBO I Collector Current 8 A C I Base Current 1 A B P Collector Dissipation (T =25°C) 50 W C C T Junction Temperature 150 °C J T Storage Temperature - 65 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted C Symbol Parameter Test Condition Min. Typ. Max. Units I Collector Cut-off Current : BD533 V = 45V, I = 0 100 μA CBO CB E : BD535 V = 60V, I = 0 100 μA CB E : BD537 V = 80V, I = 0 100 μA CB E I Collector Cut-off Current : BD533 V = 45V, V = 0 100 μA CES CE BE : BD535 V = 60V, V = 0 100 μA CE BE : BD537 V = 80V, V = 0 100 μA CE BE I Emitter Cut-off Current V = 5V, I = 0 1 mA EBO EB C h * DC Current Gain : BD533/535 V = 5V, I = 10mA 20 FE CE C : BD537 15 : ALL DEVICE V = 2V, I = 500mA 40 CE C : BD533/535 V = 2V, I = 2A 25 CE C : BD537 15 h h Groups FE FE J : ALL DEVICE V = 2V, I = 2A 30 75 CE C V = 2V, I = 3A 15 CE C K : ALL DEVICE V = 2V, I = 2A 40 100 CE C V = 2V, I = 3A 20 CE C V (sat) * Collector-Emitter Saturation Voltage I = 2A, I = 0.2A 0.8 V CE C B I = 6A, I = 0.6A 0.8 V C B V (on) * Base-Emitter ON Voltage V = 2V, I = 2A 1.5 V BE CE C f Current Gain Bandwidth Product V = 1V, I = 500mA 3 12 MHz T CE C * Pulse Test: PW =300μs, duty Cycle =1.5% Pulsed ©2000 Fairchild Semiconductor International Rev. A, February 2000
