BD440S ,PNP Epitaxial Silicon TransistorApplications• Complement to BD439, BD441 respectivelyTO-1261PNP Epitaxial Silicon Transistor1. Emit ..
BD441 , 36.000W Switching NPN Plastic Leaded Transistor. 80V Vceo, 4.000A Ic, 15 hFE.THERMAL CHARACTERISTICSÎÎÎÎÎÎBD437G TO−225AA 500 Units/BoxCharacteristic Symbol Max Unit(Pb−Free)ÎÎ ..
BD441 , 36.000W Switching NPN Plastic Leaded Transistor. 80V Vceo, 4.000A Ic, 15 hFE.2BD435, BD437, BD439, BD4412.01.6I = 10 A 100 mA 1.0 A 3.0 AC1.20.8T = 25°CJ0.400.05 0.070.1 0.2 0. ..
BD442 ,Leaded Power Transistor General PurposeTHERMAL CHARACTERISTICSBD436TG TO−225AA 500 Units/BoxÎÎÎÎÎÎ(Pb−Free)Characteristic Symbol Max UnitÎ ..
BD45271G , Voltage Detector IC built in Delay Citcuit
BD45272G , Voltage Detector IC built in Delay Citcuit
BPNGA16E , Quad Differential Drivers BDG1A, BDP1A, BDGLA, BPNGA, BPNPA, and BPPGA
BPNGA16E-TR , Quad Differential Drivers BDG1A, BDP1A, BDGLA, BPNGA, BPNPA, and BPPGA
BPNGA16P , Quad Differential Drivers BDG1A, BDP1A, BDGLA, BPNGA, BPNPA, and BPPGA
BPNPA16P , Quad Differential Drivers BDG1A, BDP1A, BDGLA, BPNGA, BPNPA, and BPPGA
BPV10 ,Silicon PIN Photodiode Document Number 815024 (5) Rev. 3, 20-May-99BPV10Vishay SemiconductorsOzone Depleting Substances P ..
BPV10NF ,High Speed Silicon PIN Photodiode Document Number 815034 (5) Rev. 2, 20-May-99BPV10NFVishay SemiconductorsOzone Depleting Substances ..
BD440S
PNP Epitaxial Silicon Transistor
BD440/442 BD440/442 Medium Power Linear and Switching Applications • Complement to BD439, BD441 respectively TO-126 1 PNP Epitaxial Silicon Transistor 1. Emitter 2.Collector 3.Base Absolute Maximum Ratings T =25°C unless otherwise noted C Symbol Parameter Value Units V Collector-Base Voltage CBO : BD440 - 60 V : BD442 - 80 V V Collector-Emitter Voltage CES : BD440 - 60 V : BD442 - 80 V V Collector-Emitter Voltage CEO : BD440 - 60 V : BD442 - 80 V V Emitter-Base Voltage - 5 V EBO I Collector Current (DC) - 4 A C I *Collector Current (Pulse) - 7 A CP I Base Current - 1 A B P Collector Dissipation (T =25°C) 36 W C C T Junction Temperature 150 °C J T Storage Temperature - 65 ~ 1 50 °C STG Electrical Characteristics T =25°C unless otherwise noted C Symbol Parameter Test Condition Min. Typ. Max. Units V (sus) Collector-Emitter Sustaining Voltage CEO : BD440 I = - 100mA, I = 0 -60 V C B : BD442 -80 V I Collector Cut-off Current : BD440 V = - 60V, I = 0 - 100 μA CBO CB E : BD442 V = - 80V, I = 0 - 100 μA CB E I Collector Cut-off Current : BD440 V = - 60V, V = 0 - 100 μA CES CE BE : BD442 V = - 80V, V = 0 - 100 μA CE BE I Emitter Cut-off Current V = - 5V, I = 0 - 1 mA EBO EB C h * DC Current Gain : BD440 V = - 5V, I = - 10mA 20 140 FE CE C : BD442 15 140 : BD440 V = - 1V, I = - 500mA 40 140 CE C : BD442 40 140 : BD440 V = - 1V, I = - 2A 25 CE C : BD442 15 V (sat) * Collector-Emitter Saturation Voltage I = - 2A, I = - 0.2A - 0.8 V CE C B V (on) * Base-Emitter ON Voltage V = - 5V, I = - 10mA -0.58 V BE CE C V = -1 V, I = - 2A - 1.5 V CE C f Current Gain Bandwidth Product V = - 1V, I = - 250mA 3 MHz T CE C * Pulse Test: PW=300μs, duty Cycle=1.5% Pulsed ©2001 Rev. A1, June 2001
