BD379 ,NPN Epitaxial Silicon TransistorApplications Complement to BD376, BD378 and BD380 respectivelyTO-1261NPN Epitaxial Silicon Transis ..
BD37A41FVM-TR , Voltage Detector ICs with Watchdog Timer Built-in watchdog timer
BD380 ,PNP Epitaxial Silicon TransistorApplications Complement to BD375, BD377 and BD379 respectivelyTO-1261PNP Epitaxial Silicon Transis ..
BD3801FS , SCF built-in sound processor for car audio
BD3801FS , SCF built-in sound processor for car audio
BD3805F , SCF built-in sound processor for car audio
BP5034D15 , AC/DC converter AC100V input, 15V/80mA output
BP5035A12 , AC100V input, −12V/200mA output
BP5035A12 , AC100V input, −12V/200mA output
BP5039B12 , AC100V input, 12V/300mA output
BP5045A , Non-Isolated AC/DC Converter
BP5053-12 , Non-isolated AC/DC converter
BD379
NPN Epitaxial Silicon Transistor
BD375/377/379 BD375/377/379 Medium Power Linear and Switching Applications Complement to BD376, BD378 and BD380 respectively TO-126 1 NPN Epitaxial Silicon Transistor 1. Emitter 2.Collector 3.Base Absolute Maximum Ratings T =25°C unless otherwise noted C Symbol Parameter Value Units V Collector-Base Voltage : BD375 50 V CBO : BD377 75 V : BD379 100 V V Collector-Emitter Voltage : BD375 45 V CEO : BD377 60 V : BD379 80 V V Emitter-Base Voltage 5 V EBO I Collector Current (DC) 2 A C I *Collector Current (Pulse) 3 A CP I Base Current 1 A B P Collector Dissipation (T =25°C) 25 W C C T Junction Temperature 150 °C J T Storage Temperature - 55 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted C Symbol Parameter Test Condition Min. Typ. Max. Units V (sus) * Collector-Emitter Sustaining Voltage CEO : BD375 I = 100mA, I = 0 45 V C B : BD377 60 V : BD379 80 V BV Collector-Base : BD375 I = 100μA, I = 0 50 V CBO C E Breakdown Voltage : BD377 75 V : BD379 100 V I Collector Cut-off Current : BD375 V = 45V, I = 0 2 μA CBO CB E : BD377 V = 60V, I = 0 2 μA CB E : BD379 V = 80V, I = 0 2 μA CB E I Emitter Cut-off Current V = 5V, I = 0 100 μA EBO EB C h * DC Current Gain V = 2V, I = 0.15A 40 375 FE1 CE C h V = 2V, I = 1A 20 FE2 CE C V (sat) * Collector-Emitter Saturation Voltage I = 1A, I = 0.1A 1 V CE C B V (on) * Base-Emitter ON Voltage V = 2V, I = 1A 1.5 V BE CE C t Turn ON Time V = 30V, I = 0.5A 50 ns ON CC C I = - I = 0.05A t Turn OFF Time B1 B2 500 ns OFF R = 60Ω L * Pulse Test: PW=350μs, duty Cycle=2% Pulsed h Classification FE Classification 6 10 16 25 h 40 ~ 100 63 ~ 160 100 ~ 250 150 ~ 375 FE1 ©2000 Fairchild Semiconductor International Rev. A, February 2000
