BD243BTU ,NPN Epitaxial Silicon TransistorApplications Complement to BD244, BD244A, BD244B and BD244C respectivelyTO-22011.Base 2.Collect ..
BD243C ,COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORSBD243B/BD243CBD244B/BD244C®COMPLEMENTARY SILICON POWER TRANSISTORS■ STMicroelectronics PREFERREDSAL ..
BD243C. ,COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORSBD243B/BD243CBD244B/BD244C®COMPLEMENTARY SILICON POWER TRANSISTORS■ STMicroelectronics PREFERREDSAL ..
BD244B ,COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS
BD244C ,COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORSBD243B/BD243CBD244B/BD244C®COMPLEMENTARY SILICON POWER TRANSISTORS■ STMicroelectronics PREFERREDSAL ..
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BD243BTU
NPN Epitaxial Silicon Transistor
BD243/A/B/C BD243/A/B/C Medium Power Linear and Switching Applications Complement to BD244, BD244A, BD244B and BD244C respectively TO-220 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted C Symbol Parameter Value Units V Collector-Base Voltage CBO : BD243 45 V : BD243A 60 V : BD243B 80 V : BD243C 100 V V Collector-Emitter Voltage CEO : BD243 45 V : BD243A 60 V : BD243B 80 V : BD243C 100 V V Emitter-Base Voltage 5 V EBO I Collector Current (DC) 6 A C I *Collector Current (Pulse) 10 A CP I Base Current 2 A B P Collector Dissipation (T =25°C) 65 W C C T Junction Temperature 150 °C J T Storage Temperature - 65 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted C Symbol Parameter Test Condition Min. Typ. Max. Units V (sus) * Collector-Emitter Sustaining Voltage CEO : BD243 I =30mA, I =0 45 V C B : BD243A 60 V : BD243B 80 V : BD243C 100 V I Collector Cut-off Current : BD243/243A V = 30V, I = 0 0.7 mA CEO CE B : BD243B/243C V = 60V, I = 0 0.7 mA CE B I Collector Cut-off Current : BD243 V = 45V, V = 0 0.4 mA CES CE BE : BD243A V = 60V, V = 0 0.4 mA CE BE : BD243B V = 80V, V = 0 0.4 mA CE BE : BD243C V = 100V, V = 0 0.4 mA CE BE I Emitter Cut-off Current V = 5V, I = 0 1 mA EBO EB C h *DC Current Gain V = 4V, I = 0.3A 30 FE CE C V = 4V, I = 3A 15 CE C V (sat) *Collector-Emitter Saturation Voltage I = 6A, I = 1A 1.5 V CE C B V (on) *Base-Emitter ON Voltage V = 4V, I = 6A 2 V BE CE C * Pulse Test :PW=300μs, duty Cycle<20% Pulsed ©2000 Fairchild Semiconductor International Rev. A, February 2000
