BD234STU ,PNP Epitaxial Silicon TransistorApplications Complement to BD 233/235/237 respectivelyTO-12611. Emitter 2.Collector 3.BasePN ..
BD235 ,Leaded Power Transistor General PurposeBD235 BD236BD237 BD238®COMPLEMENTARY SILICON POWER TRANSISTORS■ STMicroelectronics PREFERREDSALESTY ..
BD235 ,Leaded Power Transistor General Purpose
BD235 ,Leaded Power Transistor General PurposeBD235 BD236BD237 BD238®COMPLEMENTARY SILICON POWER TRANSISTORS■ STMicroelectronics PREFERREDSALESTY ..
BD235 ,Leaded Power Transistor General Purpose
BD236 ,Leaded Power Transistor General PurposeBD235 BD236BD237 BD238®COMPLEMENTARY SILICON POWER TRANSISTORS■ STMicroelectronics PREFERREDSALESTY ..
BNX003-01 , SMD/BLOCK Type EMI Suppression Filters
BNX005-01 , SMD/BLOCK Type EMI Suppression Filters
BNX005-01 , SMD/BLOCK Type EMI Suppression Filters
BNX012-01 , SMD/BLOCK Type EMI Suppression Filters
BNX012H01 , DESIGN ENGINEERING KITS
BNX022-01L , Block Type EMIFILr LC Combined Type
BD234STU
PNP Epitaxial Silicon Transistor
BD234/236/238 BD234/236/238 Medium Power Linear and Switching Applications Complement to BD 233/235/237 respectively TO-126 1 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted C Symbol Parameter Value Units V Collector-Base Voltage CBO : BD234 - 45 V : BD236 - 60 V : BD238 - 100 V V Collector-Emitter Voltage CEO : BD234 - 45 V : BD236 - 60 V : BD238 - 80 V V Collector-Emitter Voltage CER : BD234 - 45 V : BD236 - 60 V : BD238 - 100 V V Emitter-Base Voltage - 5 V EBO I Collector Current (DC) - 2 A C I *Collector Current (Pulse) - 6 A CP P Collector Dissipation (T =25°C) 25 W C C T Junction Temperature 150 °C J T Storage Temperature - 65 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted C Symbol Parameter Test Condition Min. Typ. Max. Units V (sus) * Collector-Emitter Sustaining Voltage CEO : BD234 I = - 100mA, I = 0 - 45 V C B : BD236 - 60 V : BD238 - 80 V I Collector Cut-off Current CBO : BD234 V = - 45V, I = 0 - 100 μA CB E : BD236 V = - 60V, I = 0 - 100 μA CB E : BD238 V = - 100V, I = 0 - 100 μA CB E I Emitter Cut-off Current V = - 5V, I = 0 - 1 mA EBO EB C h * DC Current Gain V = - 2V, I = - 150mA 40 FE CE C V = - 2V, I = - 1A 25 CE C V (sat) * Collector-Emitter Saturation Voltage I = - 1A , I = - 0.1A - 0.6 V CE C B V (on) * Base-Emitter ON Voltage V = - 2V, I = - 1A - 1.3 V BE CE C f Current Gain Bandwidth Product V = - 10V, I = -250mA 3 MHz T CE C * Pulse Test: PW=300μs, duty Cycle=1.5% Pulsed ©2000 Fairchild Semiconductor International Rev. A, February 2000
