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BD17610STUFAIRCHILDN/a80avaiPNP Epitaxial Silicon Transistor


BD17610STU ,PNP Epitaxial Silicon TransistorApplications• Complement to BD 175/177/179 respectivelyTO-12611. Emitter 2.Collector 3.BasePN ..
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BD179 ,Leaded Power Transistor General PurposeELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted)CÎÎ CharacteristicÎÎÎÎÎÎ SymbolÎÎÎÎ Min ..
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BD17610STU
PNP Epitaxial Silicon Transistor
BD176/178/180 BD176/178/180 Medium Power Linear and Switching Applications • Complement to BD 175/177/179 respectively TO-126 1 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted C Symbol Parameter Value Units V *Collector-Base Voltage : BD176 - 45 V CBO : BD178 - 60 V : BD180 - 80 V V Collector-Emitter Voltage : BD176 - 45 V CEO : BD178 - 60 V : BD180 - 80 V V Emitter-Base Voltage - 5 V EBO I Collector Current (DC) - 3 A C I *Collector Current (Pulse) - 7 A C P Collector Dissipation (T =25°C) 30 W C C R Junction to Ambient 70 °C/W θja R Junction to Case 8.5 °C/W θjc T Junction Temperature 150 °C J T Storage Temperature - 65 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted C Symbol Parameter Test Condition Min. Typ. Max. Units V (sus) * Collector-Emitter Sustaining Voltage CEO : BD176 I = - 100mA, I = 0 - 45 V C B : BD178 - 60 V : BD180 - 80 V I Collector Cut-off Current : BD176 V = - 45V, I = 0 - 100 μA CBO CB E : BD178 V = - 60V, I = 0 - 100 μA CB E : BD180 V = - 80V, I = 0 - 100 μA CB E I Emitter Cut-off Current V = - 5V, I = 0 - 1 mA EBO EB C h * DC Current Gain V = - 2V, I = - 150mA 40 250 FE1 CE C h V = - 2V, I = - 1A 15 FE2 CE C V (sat) * Collector-Emitter Saturation Voltage I = -1 A , I = - 0.1A - 0.8 V CE C B V (on) * Base-Emitter On Voltage V = - 2V, I = -1 A - 1.3 V BE CE C f Current Gain Bandwidth Product V = -10V, I = - 250mA 3 MHz T CE C * Pulse Test: PW=300μs, duty Cycle=1.5% Pulsed h Classificntion FE Classification 6 10 16 h 40 ~ 100 63 ~ 160 100 ~ 250 FE1 * Classification 16: Only BD 176 ©2002 Rev. B1, October 2002
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