| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| BD1604MUV-E2 |
ROHM |
N/a |
8367 |
 |
|
| BD1604MUV-E2 |
ROHM |
N/a |
2800 |
|
|
BD160GB64CE , 16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory
BD175 ,Leaded Power Transistor General Purpose
BD175 ,Leaded Power Transistor General Purpose
BD17610STU ,PNP Epitaxial Silicon TransistorApplications• Complement to BD 175/177/179 respectivelyTO-12611. Emitter 2.Collector 3.BasePN ..
BD179 ,Leaded Power Transistor General PurposeBD179®NPN SILICON TRANSISTOR■ STMicroelectronics PREFERREDSALESTYPE ■ NPN TRANSISTORAPPLICATION ..
BN1A3Q ,Compound transistorDATA SHEETCOMPOUND TRANSISTORBN1A3Qon-chip resistor PNP silicon epitaxial transistorFor mid-speed ..
BN1A4M ,The BN1A4M is designed for use in medium speed switching circuit.ELECTRICAL CHARACTERISTICS (Ta = 25 °C)
CHARACTERISTIC MIN. TYP. MAX. UNIT
Input Resistance 7.0 ..
BN1A4P ,PNP SILICON TRANSISTORT PNP SILICON TRANSISTOR
BN1A4P
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DESCRIPTION The BN1A4P is designed for use i ..
