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BCP54-16 |BCP5416NXP/PHILIPSN/a7800avaiGeneral Purpose Transistors
BCX54NXP/PHILIPSN/a1000avaiSURFACE MOUNT NPN SILICON TRANSISTOR
BCX54-10 |BCX5410NXP/PHILIPSN/a1000avaiSMD Small Signal Transistor NPN High Current
BCX54-16 |BCX5416NXPN/a47128avaiSMD Small Signal Transistor NPN High Current
BCX54-16 |BCX5416NXP/PHILIPSN/a1000avaiSMD Small Signal Transistor NPN High Current


BCX54-16 ,SMD Small Signal Transistor NPN High Current
BCX54-16 ,SMD Small Signal Transistor NPN High CurrentFeatures and benefits High current Three current gain selections High power dissipation capabili ..
BCX54-16 ,SMD Small Signal Transistor NPN High CurrentFeatures and benefits High current Three current gain selections High power dissipation capabili ..
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BCP54-16-BCX54-BCX54-10-BCX54-16
45 V, 1 A NPN medium power transistor
1. Product profile
1.1 General description

NPN medium power transistor series in Surface-Mounted Device (SMD) plastic packages.
[1] Valid for all available selection groups.
1.2 Features and benefits
High current Three current gain selections High power dissipation capability Exposed heatsink for excellent thermal and electrical conductivity (SOT89, SOT1061) Leadless very small SMD plastic package with medium power capability (SOT1061) AEC-Q101 qualified
1.3 Applications

1.4 Quick reference data

[1] Pulse test: tp 300 s; = 0.02.
BCP54; BCX54; BC54P A
45 V, 1 A NPN medium power transistors
Rev. 8 — 21 October 2011 Product data sheet
Table 1. Product overview

BCP54 SOT223 SC-73 - BCP51
BCX54 SOT89 SC-62 TO-243 BCX51
BC54PA SOT1061 - - BC51PA Linear voltage regulators  Power management Low-side switches  MOSFET drivers Battery-driven devices  Amplifiers
Table 2. Quick reference data

VCEO collector-emitter voltage open base - - 45 V collector current - - 1 A
ICM peak collector current single pulse; tp 1ms - - 2 A
hFE DC current gain VCE =2V; IC =150 mA [1] 63 - 250
hFE selection -10 VCE =2V; IC =150 mA [1] 63 - 160
hFE selection -16 VCE =2V; IC =150 mA [1] 100 - 250
NXP Semiconductors BCP54; BCX54; BC54PA
45 V, 1 A NPN medium power transistors
2. Pinning information

3. Ordering information

[1] Valid for all available selection groups.
Table 3. Pinning
SOT223
SOT89
SOT1061
Table 4. Ordering information

BCP54 SC-73 plastic surface-mounted package with increased
heatsink; 4 leads
SOT223
BCX54 SC-62 plastic surface-mounted package; exposed die pad for
good heat transfer; 3 leads
SOT89
BC54PA HUSON3 plastic thermal enhanced ultra thin small outline
package; no leads; 3 terminals; body 22 0.65 mm
SOT1061
NXP Semiconductors BCP54; BCX54; BC54PA
45 V, 1 A NPN medium power transistors
4. Marking
Table 5. Marking codes
BCP54 BCP54
BCP54-10 BCP54/10
BCP54-16 BCP54/16
BCX54 BA
BCX54-10 BC
BCX54-16 BD
BC54PA AT
BC54-10PA BF
BC54-16PA BG
NXP Semiconductors BCP54; BCX54; BC54PA
45 V, 1 A NPN medium power transistors
5. Limiting values

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2.
[4] Device mounted on an FR4 PCB, 4-layer copper, tin-plated and standard footprint.
[5] Device mounted on an FR4 PCB, 4-layer copper, tin-plated, mounting pad for collector 1 cm2.
Table 6. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).
VCBO collector-base voltage open emitter - 45 V
VCEO collector-emitter voltage open base - 45 V
VEBO emitter-base voltage open collector - 5 V collector current - 1 A
ICM peak collector current single pulse;  1ms A base current - 0.3 A
IBM peak base current single pulse;  1ms
-0.3 A
Ptot total power dissipation Tamb25C
BCP54 [1] -0.65 W
[2] -1.00 W
[3] -1.35 W
BCX54 [1] -0.50 W
[2] -0.95 W
[3] -1.35 W
BC54PA [1] -0.42 W
[2] -0.83 W
[3] -1.10 W
[4] -0.81 W
[5] -1.65 W junction temperature - 150 C
Tamb ambient temperature 55 +150 C
Tstg storage temperature 65 +150 C
NXP Semiconductors BCP54; BCX54; BC54PA
45 V, 1 A NPN medium power transistors

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