BCW65ALT1 ,Small Signal NPNELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)ACharacteristic Symbol Min Typ Max Unit ..
BCW65C ,Surface mount Si-Epitaxial PlanarTransistorsCharacteristicsCollector-emitter breakdown voltage V V(BR)CEOI = 10 mA, I = 0 32 - -BCW65C B45 - ..
BCW66 ,NPN Low Sat Transistor
BCW66 ,NPN Low Sat TransistorBCW66SMALL SIGNAL NPN TRANSISTORSType MarkingBCW66F EFBCW66G EGBCW66H EHn SILICON EPITAXIALPLANAR N ..
BCW66F ,General Purpose TransistorsCharacteristicsCollector-emitter breakdown voltage V V(BR)CEOI = 10 mA, I = 0 32 - -BCW65C B45 - ..
BCW66G ,Surface mount Si-Epitaxial PlanarTransistorsCharacteristicsDC current gain 1) -hFEI = 500 mA, V = 2 V h -grp.A/F - 35 -C CE FEh -grp.B/G - ..
BLM21BD152SN1D , EMIFIL (Inductor type) Chip Ferrite Bead BLM21B Series (0805 Size)
BLM21BD182SN1D , EMIFIL (Inductor type) Chip Ferrite Bead BLM21B Series (0805 Size)
BLM21BD182SN1D , EMIFIL (Inductor type) Chip Ferrite Bead BLM21B Series (0805 Size)
BLM21BD221SN1D , EMIFIL (Inductor type) Chip Ferrite Bead BLM21B Series (0805 Size)
BLM21BD222TN1D , EMIFIL (Inductor type) Chip Ferrite Bead BLM21B Series (0805 Size)
BLM21BD222TN1D , EMIFIL (Inductor type) Chip Ferrite Bead BLM21B Series (0805 Size)
BCW65ALT1
Small Signal NPN
BCW65ALT1, BCW65CL T1
General Purpose T ransistor
NPN Silicon
Features Pb−Free Package is Available
MAXIMUM RATINGSMaximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
THERMAL CHARACTERISTICS FR−5 = 1.0 � 0.75 � 0.062 in. Alumina = 0.4 � 0.3 � 0.024 in 99.5% alumina.
