BCV29 ,SOT89 NPN SILICON PLANAR DARLINGTON TRANSISTOR
BCV29 ,SOT89 NPN SILICON PLANAR DARLINGTON TRANSISTOR
BCV29 ,SOT89 NPN SILICON PLANAR DARLINGTON TRANSISTORCharacteristicsCollector-emitter breakdown voltage V V(BR)CEOI = 10 mA, I = 0 30 - -BCV29C B60 - ..
BCV29 ,SOT89 NPN SILICON PLANAR DARLINGTON TRANSISTOR
BCV29 ,SOT89 NPN SILICON PLANAR DARLINGTON TRANSISTOR
BCV46 ,PNP Darlington TransistorAPPLICATIONS• Where very high amplification is required.DESCRIPTIONhandbook, halfpagePNP Darlington ..
BLM18GG471SN1D , EMIFIL (Inductor type) Chip Ferrite Bead for High-GHz Noise BLM18G Series (0603 Size)
BLM18HB121SN1D , EMIFIL (Inductor type) Chip Ferrite Bead for GHz Noise BLM18H Series (0603 Size)
BLM18HB121SN1D , EMIFIL (Inductor type) Chip Ferrite Bead for GHz Noise BLM18H Series (0603 Size)
BLM18HB221SN1D , EMIFIL (Inductor type) Chip Ferrite Bead for GHz Noise BLM18H Series (0603 Size)
BLM18HB331SN1D , EMIFIL (Inductor type) Chip Ferrite Bead for GHz Noise BLM18H Series (0603 Size)
BLM18HB331SN1D , EMIFIL (Inductor type) Chip Ferrite Bead for GHz Noise BLM18H Series (0603 Size)
BCV29-BCV49
Darlington Transistors
BCV29, BCV49
NPN Silicon Darlington Transistors For general AF applications High collector current High current gain Complementary types: BCV28, BCV48 (PNP)
Maximum Ratings
Thermal ResistanceFor calculation of RthJA please refer to Application Note Thermal Resistance
BCV29, BCV49
Electrical Characteristics at TA = 25°C, unless otherwise specified.
DC Characteristics
BCV29, BCV49
Electrical Characteristics at TA = 25°C, unless otherwise specified.
DC Characteristics
AC Characteristics
BCV29, BCV49
Collector cutoff current ICBO = f (TA)CB = V10
EHP00318T
150CBO100
Total power dissipation Ptot = f(TS)
200
400
600
800
1200
tot
Permissible pulse loadtotmax / PtotDC = f (tp)-501010-4-3-2
totmax
totPDC
Transition frequency fT = f (IC)CE = 5V
EHP003211012f
BCV29, BCV49
Base-emitter saturation voltage10
EHP00323
BEsatV
Collector-emitter saturation voltageC = f (V10
CEsatV
1.510CmA
DC current gain hFE = f (IC)CE = 5V
EHP0032531001h
Collector-base capacitance CCB = f (VCBO
Emitter-base capacitance CEB = f (VEBO)10
CB0CEB0()
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