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BCR141-BCR141FE6327-BCR141S-BCR141T-BCR141W Fast Delivery,Good Price
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BCR141INFINEONN/a174000avaiNPN Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit)
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BCR141 ,NPN Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit)Characteristics50 - -Collector-emitter breakdown voltage V V(BR)CEOI = 100 µA, I = 0 C BCollector-b ..
BCR141 E6327 , NPN Silicon Digital Transistor
BCR141E6327 , NPN Silicon Digital Transistor
BCR141F ,Single digital (Built-In Resistor) AF-Transistors in TSFP-3 PackageBCR141.../SEMH1NPN Silicon Digital Transistor• Switching circuit, inverter, interface circuit, dr ..
BCR141FE6327 ,Digital TransistorsCharacteristics50 - -Collector-emitter breakdown voltage V V(BR)CEOI = 100 µA, I = 0 C BCollector-b ..
BCR141S ,NPN Silicon Digital Transistor Array (Switching circuit, inverter, interface, driver circuit)BCR141...NPN Silicon Digital Transistor• Switching circuit, inverter, interface circuit, driver c ..
BLF7G20LS-140P ,Power LDMOS transistorapplications in the 1800 MHz to 2000 MHz frequency rangeBLF7G20LS-140PNXP SemiconductorsPower LDMOS ..
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BLF7G20LS-250P ,Power LDMOS transistorapplications in the 1805 MHz to 1880 MHz frequency rangeBLF7G20L-250P; BLF7G20LS-250PNXP Semiconduc ..
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BLF7G22LS-130 ,Power LDMOS transistorapplications in the 2000 MHz to 2200 MHz frequency rangeBLF7G22L-130; BLF7G22LS-130NXP Semiconducto ..
BLF7G22LS-200 ,Power LDMOS transistorapplications at frequencies from 2110 MHz to 2170 MHz. Table 1. Typical performanceTypical RF perfo ..


BCR141-BCR141FE6327-BCR141S-BCR141T-BCR141W
Digital Transistors
BCR141...
NPN Silicon Digital Transistor

• Switching circuit, inverter, interface circuit,
driver circuit
• Built in bias resistor (R1=22kΩ, R2=22kΩ)
• For 6-PIN packages: two (galvanic) internal
isolated transistors with good matching
in one package
BCR141/F/L3
BCR141T/W
BCR141S/U

EHA07184B
EHA07174B2E2B1E1
BCR141...
Maximum Ratings
Thermal Resistance
For calculation of RthJA please refer to Application Note Thermal Resistance
BCR141...
DC Characteristics
AC Characteristics
Pulse test: t < 300µs; D < 2%
BCR141...
DC current gain h
FE = ƒ(IC)CE = 5 V (common emitter configuration)2 10 10 10 10
Collector-emitter saturation voltage
CEsat = ƒ(IC), hFE = 2010 10 10
Input on Voltage Vi
(on) = ƒ(IC)CE = 0.3V (common emitter voltage)
10
-1 10 10 10 10
Input off voltage V
i(off) = ƒ(IC)CE = 5V (common emitter voltage)
-3 10
-2 10
-1 10 10 10
BCR141...
Total power dissipation P
tot = ƒ(TS)
BCR141
50
100
150
200
300
tot
Total power dissipation P
tot = ƒ(TS)
BCR141F
50
100
150
200
300
tot
Total power dissipation P
tot = ƒ(TS)
BCR141L3
50
100
150
200
300
tot
Total power dissipation P
tot = ƒ(TS)
BCR141S
50
100
150
200
300
tot
BCR141...
Total power dissipation P
tot = ƒ(TS)
BCR141T
50
100
150
200
300
tot
Total power dissipation P
tot = ƒ(TS)
BCR141U
50
100
150
200
300
tot
Total power dissipation P
tot = ƒ(TS)
BCR141W
50
100
150
200
300
tot
Permissible Pulse Load R
thJS = ƒ(tp)
BCR141
10 0
-1 10 10 10 10 10
thJS
ic,good price


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