BCR135F ,Single digital (Built-In Resistor) AF-Transistors in TSFP-3 PackageBCR135.../SEMH9NPN Silicon Digital Transistor• Switching circuit, inverter, interface circuit dri ..
BCR135F ,Single digital (Built-In Resistor) AF-Transistors in TSFP-3 PackageCharacteristics50 - -Collector-emitter breakdown voltage V V(BR)CEOI = 100 µA, I = 0 C BCollector-b ..
BCR135S ,Digital TransistorsCharacteristics50 - -Collector-emitter breakdown voltage V V(BR)CEOI = 100 µA, I = 0 C BCollector-b ..
BCR135W ,NPN Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit)Characteristics at T = 25°C, unless otherwise specifiedAParameter Symbol Values Unitmin. typ. max.D ..
BCR139 ,Digital TransistorsBCR139...NPN Silicon Digital Transistor• Switching circuit, inverter, interface circuit, driver c ..
BCR139F ,Single digital (Built-In Resistor) AF-Transistors in TSFP-3 PackageBCR139...NPN Silicon Digital Transistor• Switching circuit, inverter, interface circuit, driver c ..
BLF6G21-10G ,Power LDMOS transistorFeatures and benefits Typical 2-carrier W-CDMA performance at frequencies of 2110 MHz and 2170 MHz ..
BLF6G22-180PN ,Power LDMOS transistorapplications in the 2000 MHz to 2200 MHz frequency range2. Pinning information Table 2. PinningPin ..
BLF6G22L-40BN ,Power LDMOS transistorFeatures and benefits Typical 2-carrier W-CDMA performance at frequencies of 2110 MHz and 2170 MHz ..
BLF6G22LS-100 ,Power LDMOS transistorFeatures and benefits Typical 2-carrier W-CDMA performance at frequencies of 2110 MHz and 2170 MHz ..
BLF6G22LS-100 ,Power LDMOS transistorapplications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performanceRF performance a ..
BLF6G22LS-130 ,Power LDMOS transistorFeaturesn Typical 2-carrier W-CDMA performance at frequencies of 2110 MHz and 2170 MHz, asupply vol ..
BCR135F
Single digital (Built-In Resistor) AF-Transistors in TSFP-3 Package
BCR135.../SEMH9
NPN Silicon Digital Transistor• Switching circuit, inverter, interface circuit
driver circuit
• Built in bias resistor (R1=10kΩ, R2=47kΩ)
• For 6-PIN packages: two (galvanic) internal
isolated transistors with good matching
in one package
BCR135/F/L3
BCR135T/W
BCR135S
SEMH9EHA07184B
EHA07174B2E2B1E1
BCR135.../SEMH9
Maximum Ratings
Thermal ResistanceFor calculation of RthJA please refer to Application Note Thermal Resistance
BCR135.../SEMH9
DC Characteristics
AC CharacteristicsPulse test: t < 300µs; D < 2%
BCR135.../SEMH9
DC current gain hFE = ƒ(IC)CE = 5V (common emitter configuration)2 10 10 10 10
Collector-emitter saturation voltageCEsat = ƒ(IC), hFE = 2010 10 10
Input on Voltage Vi(on) = ƒ(IC)CE = 0.3V (common emitter configuration)
10
-1 10 10 10 10
Input off voltage Vi(off) = ƒ(IC)CE = 5V (common emitter configuration)
-3 10
-2 10
-1 10 10 10
BCR135.../SEMH9
Total power dissipation Ptot = ƒ(TS)
BCR135
50
100
150
200
300
tot
Total power dissipation Ptot = ƒ(TS)
BCR135F
50
100
150
200
300
tot
Total power dissipation Ptot = ƒ(TS)
BCR135L3
50
100
150
200
300
tot
Total power dissipation Ptot = ƒ(TS)
BCR135S
50
100
150
200
300
tot
BCR135.../SEMH9
Total power dissipation Ptot = ƒ(TS)
BCR135T
50
100
150
200
300
tot
Total power dissipation Ptot = ƒ(TS)
BCR135W
50
100
150
200
300
tot
Total power dissipation Ptot = ƒ(TS)
SEMH9
50
100
150
200
300
tot
