| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| BCR133TE6327 |
INFINEON|Infineon |
N/a |
2880 |
 |
|
BCR133W ,NPN Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit)Characteristics50 - -Collector-emitter breakdown voltage V V(BR)CEOI = 100 µA, I = 0 C BCollector-b ..
BCR135 ,Digital TransistorsBCR135...NPN Silicon Digital Transistor• Switching circuit, inverter, interface circuit driver ci ..
BCR135F ,Single digital (Built-In Resistor) AF-Transistors in TSFP-3 PackageBCR135.../SEMH9NPN Silicon Digital Transistor• Switching circuit, inverter, interface circuit dri ..
BCR135F ,Single digital (Built-In Resistor) AF-Transistors in TSFP-3 PackageCharacteristics50 - -Collector-emitter breakdown voltage V V(BR)CEOI = 100 µA, I = 0 C BCollector-b ..
BCR135S ,Digital TransistorsCharacteristics50 - -Collector-emitter breakdown voltage V V(BR)CEOI = 100 µA, I = 0 C BCollector-b ..
BLF6G10LS-200RN ,Power LDMOS transistorFeatures Typical 2-carrier W-CDMA performance at frequencies of 869 MHz and 894 MHz, a supply volt ..
BLF6G10LS-200RN ,Power LDMOS transistorapplications at frequencies from 700 MHz to 1000 MHz. Table 1. Typical performanceTypical RF perfor ..
BLF6G10LS-200RN ,Power LDMOS transistorapplications in the 700 MHz to 1000 MHz frequency range.2. Pinning information Table 2. PinningPin ..
