Partno |
Mfg |
Dc |
Qty |
Available | Descript |
BCR10PN/W1S |
INFINEON|Infineon |
N/a |
24000 |
|
|
BCR112 ,Digital TransistorsCharacteristics50 - -Collector-emitter breakdown voltage V V(BR)CEOI = 100 µA, I = 0 C BCollector-b ..
BCR112F ,Single digital (Built-In Resistor) AF-Transistors in TSFP-3 PackageCharacteristics50 - -Collector-emitter breakdown voltage V V(BR)CEOI = 100 µA, I = 0 C BCollector-b ..
BCR112F E6327 ,Digital TransistorsBCR112...NPN Silicon Digital Transistor• Switching circuit, inverter, interface circuit, driver c ..
BCR112FE6327 ,Digital TransistorsBCR112...NPN Silicon Digital Transistor• Switching circuit, inverter, interface circuit, driver c ..
BCR112T ,Single digital (complex) AF-Transistors in SC75 packageBCR112...NPN Silicon Digital Transistor• Switching circuit, inverter, interface circuit, driver c ..
BLC8G27LS-160AV ,Power LDMOS transistorapplications in the 2496 MHz to 2690 MHz frequency rangeBLC8G27LS-160AVNXP SemiconductorsPower LDMO ..
BLF175 ,HF/VHF power MOS transistorapplications. ReferThis product is supplied in anti-static packing to prevent damage caused byto th ..
BLF1820-70 ,UHF power LDMOS transistor