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Partno	Mfg	Dc	Qty	Available	Descript
BCP54-10 \|BCP5410	PHILIPS	N/a	16760	avai	NPN Silicon AF Transistors (For AF driver and output stages High collector current)
BCP5416	ST	N/a	3	avai	General Purpose Transistors

BCP54-10 ,NPN Silicon AF Transistors (For AF driver and output stages High collector current)CharacteristicsCollector-emitter breakdown voltage V V(BR)CEOI = 10 mA, I = 0 45 - -BCP54C B60 - ..
BCP5416 ,General Purpose TransistorsBCP54...BCP56NPN Silicon AF Transistors

BCP54-10-BCP5416
General Purpose Transistors
BCP54...BCP56
NPN Silicon AF Transistors For AF driver and output stages High collector current Low collector-emitter saturation voltage Complementary types: BCP51 ... BCP53 (PNP)
BCP54...BCP56
Maximum Ratings
Thermal ResistanceFor calculation of RthJA please refer to Application Note Thermal Resistance
BCP54...BCP56
Electrical Characteristics at TA = 25°C, unless otherwise specified.
DC Characteristics
AC Characteristics
BCP54...BCP56
EHP0026710mA101102f
Total power dissipation Ptot = f(TS)
150
300
450
600
750
900
1050
1200
1350
1500
1800
DC current gain hFE = f (IC)
VCE = 2V10101h10
Collector cutoff current ICBO = f (TA)
VCB = 30V10
EHP00269CBO
BCP54...BCP56
Collector-emitter saturation voltage
IC = f (VCEsat), hFE = 10
EHP00271
CEsatV
0.4V0.8100C
Base-emitter saturation voltage
IC = f (VBEsat), hFE = 1010
BEsatV10CmA
0.40.60.81.2V
Permissible pulse load
Ptotmax / PtotDC = f (tp)-501010-4-3-2
totmax
totPDC
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