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Partno	Mfg	Dc	Qty	Available	Descript
BCP28	INFINEON	N/a	5000	avai	PNP Silicon Darlington Transistors (For general AF applications High collector current High current gain)
BCP28E6327	INFINEON	N/a	3000	avai	PNP Silicon Darlington Transistor

BCP28 ,PNP Silicon Darlington Transistors (For general AF applications High collector current High current gain)CharacteristicsCollector-emitter breakdown voltage VV(BR)CEOI = 1 mA, I = 0 BCP 28 30 - -C BBCP ..
BCP28E6327 ,PNP Silicon Darlington Transistorapplications4• High collector current• High current gain• Complementary types: BCP 29/49 (NPN)32C(2 ..
BCP29 ,NPN Silicon Darlington Transistors (For general AF applications High collector current High current gain)
BCP29 ,NPN Silicon Darlington Transistors (For general AF applications High collector current High current gain)
BCP48 ,PNP Silicon Darlington Transistors (For general AF applications High collector current High current gain)
BCP48 ,PNP Silicon Darlington Transistors (For general AF applications High collector current High current gain)
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BCP28-BCP28E6327
PNP Silicon Darlington Transistor
BCP 28, BCP 48
PNP Silicon Darlington Transistors
• For general AF applications
• High collector current
• High current gain
• Complementary types: BCP 29/49 (NPN)
EHA00008
E(3)
Maximum Ratings
Thermal Resistance
BCP 28, BCP 48
Electrical Characteristics at TA = 25°C, unless otherwise specified.
DC Characteristics
BCP 28, BCP 48
Electrical Characteristics at TA = 25°C, unless otherwise specified.
DC Characteristics
AC Characteristics
BCP 28, BCP 48
Total power dissipation Ptot = f (TA*;TS)
* Package mounted on epoxy
PtotT;AS
Collector cutoff current ICBO = f (TA)
VCB = VCEmax10
EHP00242T
150CBO100
Permissible pulse load
Ptotmax / PtotDC = f (tp)
EHP0024410-5-4-3-20
totmax
totPDC
Transition frequency fT = f (IC)
VCE = 5V101012f
MHz
BCP 28, BCP 48
Collector-emitter saturation voltage
IC = f (VCEsat), hFE = 100010
EHP00247
CEsatV
150˚C
-50˚C
DC current gain hFE = f (IC)
VCE = 5V310mA10100101h1010
Base-emitter saturation voltage
IC = f (VBEsat), hFE = 100010
EHP00249
Collector-base capacitance CCB = f (VCBO)
Emitter-base capacitance CEB = f (VEBO)10
CB0CEB0()
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