BCM846S ,General Purpose TransistorsCharacteristics65 - - VCollector-emitter breakdown voltage V(BR)CEOI = 10 mA, I = 0 AC BCollector-b ..
BCM847BS ,NPN matched double transistor; delta hFE = 10 %Applications■ Current mirror■ Differential amplifier1.4 Quick reference dataTable 1: Quick reference ..
BCM847BV ,NPN/NPN matched double transistorsApplicationsn Current mirrorn Differential amplifier1.4 Quick reference dataTable 2. Quick reference ..
BCM847BV ,NPN/NPN matched double transistorsLimiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).Symbol Parameter C ..
BCM847DS ,NPN/NPN matched double transistorsGeneral descriptionNPN/NPN matched double transistors in small Surface-Mounted Device (SMD) plastic ..
BCM856DS ,PNP/PNP matched double transistorsApplicationsn Current mirrorn Differential amplifier1.4 Quick reference dataTable 2. Quick reference ..
BL1117-50CX , 1A Low Dropout Voltage Regulator
BL1117-50CX , 1A Low Dropout Voltage Regulator
BL1117-50CY , 1A Low Dropout Voltage Regulator
BL24C16 , The device is optimized for use in many industrial and commercial applications
BL24C16 , The device is optimized for use in many industrial and commercial applications
BL24C16 , The device is optimized for use in many industrial and commercial applications
BCM846S
General Purpose Transistors
NPN Silicon AF Transistor Array Precision matched transistor pair: IC 10% For current mirror applications Low collector-emitter saturation voltage Two (galvanic) internal isolated Transistors Complementary type: BCM856S
EHA07178B2E2B1E1
TR1
Maximum Ratings
Thermal ResistanceFor calculation of RthJA please refer to Application Note Thermal Resistance
BCM846S
DC CharacteristicsPuls test: t < 300µs; D < 2%
BCM846S
Electrical Characteristics at TA = 25°C, unless otherwise specified
AC Characteristics
BCM846S
Total power dissipation Ptot = (TS)
50
100
150
200
300
tot
Collector-base capacitance CCB= (VCB0
Emitter-base capacitance CEB0)51010CB0EB0
EB0V
CB0C01
Permissible Pulse Load RthJS = (tp)
10 0
-1 10 10 10 10 10
thJS
Permissible Pulse Loadtotmax/PtotDC = (tp)
10 0 10 10 10 10
totmax
totDC
BCM846S
Transition frequency fCE = 5 V101010
MHz01251010C10
EHP00364
BEsatV
0.6V1.2
Collector-emitter saturation voltageC = (V), h = 200C0.30.5
Collector current IC = (VBE)
-6 10
-5 10
-4 10
-3 10
-2 10
-1 10
BCM846S
DC current gain hCE = 5V101010-2-112101010
555C
Collector cutoff current ICBO = (TA)CBO = 30 V050100150CB0
Output characteristics IC = (VCE), B = parameter
10
11
12
