BC857T ,PNP Silicon AF Transistor
BC857T ,PNP Silicon AF TransistorcharacteristicsCollector-emitter breakdown voltage V 45 - - V(BR)CEOI = 10 mA, I = 0 C BV 50 - -Col ..
BC857T ,PNP Silicon AF Transistor
BC857W ,Surface mount Si-Epitaxial PlanarTransistors
BC857W ,Surface mount Si-Epitaxial PlanarTransistors
BC858 ,PNP Silicon Transistor (General purpose application Switching application)Thermal Characteristics (T = 25°C unless otherwise noted)AParameter Symbol Value UnitBC856 80Collec ..
BFR96TS ,Silicon NPN Planar RF TransistorRev. 5, 22-Jan-01 3 (9)BFR96TSVishay SemiconductorsS11 S21 S12 S22LIN LIN LIN LINV /V I /mA f/MHz A ..
BFR99 , ABSOLUTE MAXIMUM RATINGS
BFS17 ,NPN 1GHz wideband transistorLIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 134).SYMBOL PARAMETER CON ..
BFS17- ,NPN 1GHz wideband transistorLimiting values1. T is the temperature at the soldering point of the collector pin.sSeptember 1995 ..
BFS17AR ,Silicon NPN Planar RF TransistorRev. 4, 20-Jan-99 1 (10)BFS17A/BFS17AR/BFS17AWVishay SemiconductorsMaximum Thermal ResistanceT = 25 ..
BFS17AR ,Silicon NPN Planar RF TransistorRev. 4, 20-Jan-99 3 (10)BFS17A/BFS17AR/BFS17AWVishay SemiconductorsS11 S21 S12 S22LIN LIN LIN LINV ..
BC857T
