BC856BLT1G ,General Purpose TransistorsELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)ACharacteristic Symbol Min Typ Max Unit ..
BC856BM3T5G , General Purpose Transistor PNP Silicon
BC856BMTF ,PNP Epitaxial Silicon TransistorBC856/857/858/859/860BC856/857/858/859/860Switching and Amplifier
BC856-B-MTF ,PNP Epitaxial Silicon TransistorBC856/857/858/859/860BC856/857/858/859/860Switching and Amplifier
BC856BT ,SMD Small Signal Transistor PNP General Purpose Amplifier/Switch
BC856BT ,SMD Small Signal Transistor PNP General Purpose Amplifier/SwitchLIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 60134).SYMBOL PARAMETER C ..
BFQ68 ,NPN 4 GHz wideband transistor
BFQ68 ,NPN 4 GHz wideband transistor
BFQ68 ,NPN 4 GHz wideband transistor
BFQ69 , NPN Silicon RF Transistor
BFQ70 , NPN Silicon RF Transistor (For low-noise IF and broadband amplifiers in antenna and telecommunications systems at collector currents from 2mA to 20mA)
BFR106 ,RF-BipolarBFR106NPN Silicon RF Transistor3
BC856BLT1G-BC857CLT1G
General Purpose Transistors
BC856ALT1 Series
Preferred DevicesGeneral Purpose
Transistors
PNP Silicon
Features Pb−Free Packages are Available
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
THERMAL CHARACTERISTICS FR−5 = 1.0 x 0.75 x 0.062 in. Alumina = 0.4 x 0.3 x 0.024 in 99.5% alumina.
