| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| BC856S-E6327 |
INFINEON|Infineon |
N/a |
1789 |
 |
|
BC856T ,NPN Silicon AF TransistorsCharacteristics per TransistorV 65 - - VCollector-emitter breakdown voltage (BR)CEOI = 10 mA, I = 0 ..
BC857 ,PNP Silicon Transistor (General purpose application Switching application)Electrical Characteristics (T = 25°C unless otherwise noted)JParameter Symbol Test Condition Min Ty ..
BC857A ,SMD Small Signal Transistor PNP Low Noise
BC857A ,SMD Small Signal Transistor PNP Low Noise
BC857A ,SMD Small Signal Transistor PNP Low NoiseFeaturesC 3 • PNP Silicon Epitaxial Planar Transistors for 2switching and AF amplifier
BFR182W ,NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA)
BFR182W ,NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA)
BFR182W ,NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA)
