| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| BC847BB5000 |
INFINEON|Infineon |
N/a |
3000 |
 |
|
BC847BDW1T1 ,45 V, dual general purpose transistorELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)ACharacteristic Symbol Min Typ Max Unit ..
BC847BDW1T1 ,45 V, dual general purpose transistorTHERMAL CHARACTERISTICSBC847BDW1T1G SOT−363 3000 Units/ReelCharacteristic Symbol Max Unit(Pb−Free)T ..
BC847BDW1T1 ,45 V, dual general purpose transistorMaximum ratings applied to the device are individual stress limit values (not†Device Package Shippi ..
BC847BDW1T1G ,Dual General Purpose TransistorsELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)ACharacteristic Symbol Min Typ Max Unit ..
BC847BDW1T3G , Dual General Purpose Transistors
BFG196 ,NPN Silicon RF Transistor (For low noise, low distortion broadband amplifiers in antenna and telecommunications)
BFG198 ,NPN 8 GHz wideband transistorLIMITING VALUESIn accordance with the Absolute Maximum System (IEC 134).SYMBOL PARAMETER CONDITIONS ..
BFG19S ,NPN Silicon RF Transistor (For low noise, low distortion broadband amplifiers in antenna)
