| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| BC846BWE6327 |
IFINEON |
N/a |
62605 |
 |
|
BC846BWT1 ,General Purpose Transisitors3C, CAPACITANCE (pF)V , COLLECTOR-EMITTER VOLTAGE (V) h , NORMALIZED DC CURRENT GAINCE FEV, VOLTAGE ..
BC846BWT1 ,General Purpose TransisitorsELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)ACharacteristic Symbol Min Typ Max Unit ..
BC846BWT1 ,General Purpose TransisitorsTHERMAL CHARACTERISTICS See detailed ordering and shipping information in the packagedimensions sec ..
BC846PN ,NPN/PNP Silicon AF Transistor Array (For AF input stages and driver applications High current gain)
BC846U ,General Purpose TransistorsCharacteristics per TransistorCollector-emitter breakdown voltage V 65 - - V(BR)CEOI = 10 mA, I = 0 ..
BF994S ,N-channel dual-gate MOS-FETapplications such as:43– VHF television tunersg2– Professional communication equipment.g1PINNING1 2 ..
BF994S ,N-channel dual-gate MOS-FET
BF994SA ,N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion ModeFeatures
