| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| BC807S |
|
N/a |
33000 |
 |
|
BC807W ,Surface mount Si-Epitaxial PlanarTransistorsCharacteristicsCollector-emitter breakdown voltage V V(BR)CEOI = 10 mA, I = 0 BC 807W 45 - -C BB ..
BC808 ,PNP Silicon Transistor (High current application Switching application)
BC808 ,PNP Silicon Transistor (High current application Switching application)
BC808-16 , 0.250W General Purpose PNP SMD Transistor. 25V Vceo, 0.500A Ic, 100Rev. 1.2, 03-Jan-05 3BC807 to BC808Vishay Semiconductors010 10000.5 -V = 1V CE0.2hFE0.1-125 °C100.0 ..
BC808-16 , 0.250W General Purpose PNP SMD Transistor. 25V Vceo, 0.500A Ic, 100
BF545C ,N-channel FETGeneral descriptionN-channel symmetrical silicon junction field-effect transistors in a SOT23 packa ..
BF545C ,N-channel FETAPPLICATIONS• Impedance converters in e.g. electret microphones anddginfra-red detectorss• VHF ampl ..
BF547 ,NPN 1 GHz wideband transistor
