BC807-25W ,DiscreteELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted.)ACharacteristic Symbol Min Typ Max Uni ..
BC807-25W-7 , PNP SURFACE MOUNT TRANSISTOR
BC80740 ,PNP General Purpose Amplifierapplications at currents to 1.0 A. Sourced from Process 78.Absolute Maximum Ratings* TA = 25°C ..
bc807-40 , 0.250W General Purpose PNP SMD Transistor. 45V Vceo, 0.500A Ic, 250Rev. 1.2, 03-Jan-05 1BC807 to BC808Vishay SemiconductorsMaximum Thermal ResistanceParameter Test co ..
BC807-40LT1 ,Silicon Transistor PlasticELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted.)ACharacteristic Symbol Min Typ Max Uni ..
BC807-40LT1 ,Silicon Transistor PlasticMaximum ratings applied to the device are individual stress limit values (notSOT−23normal operating ..
BF423L ,PNP high-voltage transistors
BF450 ,PNP medium frequency transistor
BF450 ,PNP medium frequency transistor
BF450 ,PNP medium frequency transistor
BF450 ,PNP medium frequency transistor
BF458 , 10.000W Medium Power NPN Plastic Leaded Transistor. 250V Vceo, 0.100A Ic, 25 hFE.
BC807-25W
Discrete
BC807-25W, SBC807-25W,
BC807-40W, SBC807-40W
General Purpose
Transistors
PNP Silicon
Features AEC−Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
THERMAL CHARACTERISTICSStresses exceeding Maximum Ratings may damage the device. MaximumRatings are stress ratings only. Functional operation above the RecommendedOperating Conditions is not implied. Extended exposure to stresses above theRecommended Operating Conditions may affect device reliability.1. FR−4 Board, 1 oz. Cu, 100 mm2.
