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Partno Mfg Dc Qty AvailableDescript
BC638SeimensN/a695avai 0.800W General Purpose PNP Plastic Leaded Transistor. 60V Vceo, 1.000A Ic, 40
BC638Philips-FairchildN/a5000avai 0.800W General Purpose PNP Plastic Leaded Transistor. 60V Vceo, 1.000A Ic, 40
BC640PhilipsN/a8000avai 0.800W General Purpose PNP Plastic Leaded Transistor. 80V Vceo, 1.000A Ic, 40
BC64016PHILIPSN/a3000avai 0.800W General Purpose PNP Plastic Leaded Transistor. 80V Vceo, 1.000A Ic, 25
BC640-16 |BC64016PhilipsN/a4500avai 0.800W General Purpose PNP Plastic Leaded Transistor. 80V Vceo, 1.000A Ic, 25
BC640-16 |BC64016ONN/a5000avai 0.800W General Purpose PNP Plastic Leaded Transistor. 80V Vceo, 1.000A Ic, 25


BC640 , 0.800W General Purpose PNP Plastic Leaded Transistor. 80V Vceo, 1.000A Ic, 40
BC640 , 0.800W General Purpose PNP Plastic Leaded Transistor. 80V Vceo, 1.000A Ic, 40
BC640-016 ,Transistor Silicon Plastic PNPELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)ACharacteristic Symbol Min Typ Max Unit ..
BC640-016G , High Current Transistors
BC64016 , 0.800W General Purpose PNP Plastic Leaded Transistor. 80V Vceo, 1.000A Ic, 25
BC640-16 , 0.800W General Purpose PNP Plastic Leaded Transistor. 80V Vceo, 1.000A Ic, 25
BF337 , Bipolar NPN Device in a Hermetically sealed TO39
BF337 , Bipolar NPN Device in a Hermetically sealed TO39
BF3506TV ,FULL 50-60Hz RECTIFICATION BRIDGEELECTRICAL CHARACTERISTICS (per diode unless specified)Symbol Parameter Value UnitV Repetitive peak ..
BF3510TV ,FULL 50-60HZ RECTIFICATION BRIDGEELECTRICAL CHARACTERISTICS (per diode unless specified)Symbol Parameter Value UnitV Repetitive peak ..
BF392 , 1.000W General Purpose NPN Plastic Leaded Transistor. 250V Vceo, 1.000A Ic, 25
BF392 , 1.000W General Purpose NPN Plastic Leaded Transistor. 250V Vceo, 1.000A Ic, 25


BC638-BC640-BC64016-BC640-16

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