BC639-16 ,NPN Medium Power TransistorBC63916BC63916Switching and Amplifier
BC639-16ZL1G , High Current Transistors
BC639ZL1G , High Current Transistors
BC640 , 0.800W General Purpose PNP Plastic Leaded Transistor. 80V Vceo, 1.000A Ic, 40
BC640 , 0.800W General Purpose PNP Plastic Leaded Transistor. 80V Vceo, 1.000A Ic, 40
BC640 , 0.800W General Purpose PNP Plastic Leaded Transistor. 80V Vceo, 1.000A Ic, 40
BF254 ,RF TransistorsTransistors - bipolar
RF transistors
Plastic package TO 92
Type Maximum ratings
BF255 , NPN Silicon RF Transisrors
BF256B ,VHF/UHF Amplifier(N-Channel, Depletion)
BF256B ,VHF/UHF Amplifier(N-Channel, Depletion)
BF256B ,VHF/UHF Amplifier(N-Channel, Depletion)
BF256C ,VHF/UHF Amplifier(N-Channel, Depletion)
BC639-16
NPN Medium Power Transistor
BC63916 BC63916 Switching and Amplifier Applications TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted a Symbol Parameter Value Units V Collector-Emitter Voltage at R =1KΩ 100 V CER BE V Collector-Emitter Voltage 100 V CES V Collector-Emitter Voltage 80 V CEO V Emitter-Base Voltage 5 V EBO I Collector Current 1 A C P Collector Power Dissipation 1 W C T , T Operating and Storage Junction Temperature Range -55 ~ 150 °C J STG • PW=5ms, Duty Cycle=10% Electrical Characteristics T =25°C unless otherwise noted a Symbol Parameter Test Condition Min. Typ. Max. Units BV Collector-Base Breakdown Voltage I = 100μA, I = 0 100 V CBO C E BV Collector-Emitter Breakdown Voltage I = 10mA, I = 0 80 V CEO C B BV Emitter-Base Breakdown Voltage I = 10μA, I = 0 5.0 V EBO E C I Collector Cut-off Current V = 30V, I = 0 100 nA CBO CB E I Emitter Cut-off Current V = 5V, I = 0 10 μA EBO EB C h DC Current Gain V = 2V, I = 5mA 25 FE1 CE C h V = 2V, I = 150mA 100 250 FE2 CE C h V = 2V, I = 500mA 25 FE3 CE C V (sat) Collector-Emitter Saturation Voltage I = 500mA, I = 50mA 0.5 V CE C B V (on) Base-Emitter On Voltage V = 2V, I = 500mA 1 V BE CE C f Current Gain Bandwidth Product V = 5V, I =10mA, 100 MHz T CE C f = 50MHz ©2003 Rev. A, January 2003
