Partno |
Mfg |
Dc |
Qty |
Available | Descript |
BC57E687CG |
CSR |
N/a |
62 |
|
|
BC617 ,NPN Silicon Darlington TransistorcharacteristicsCollector-emitter breakdown voltage V(BR)CE0 VIC = 10 mABC 617 40 – –BC 618 55 – –Co ..
BC618 ,NPN Darlington transistor
BC618 ,NPN Darlington transistor
BC618 ,NPN Darlington transistor
BC635 ,High Current Transistors
BF2040W ,Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V)BF2040...Silicon N-Channel MOSFET Tetrode• For low noise , high gain controlled input stages up ..
BF240 ,NPN Radio Frequency TransistorBF240BF240NPN RF TransistorTO-9211. Collector 2. Emitter 3. BaseAbsolute Maximum Ratings* T =25° ..
BF244A ,N-Channel RF Amplifierapplications involving pulsed or low duty cycle operations.Thermal Characteristics TA = 25°C u ..