| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| BC56S |
|
N/a |
1500 |
 |
|
BC617 ,NPN Silicon Darlington TransistorcharacteristicsCollector-emitter breakdown voltage V(BR)CE0 VIC = 10 mABC 617 40 – –BC 618 55 – –Co ..
BC618 ,NPN Darlington transistor
BC618 ,NPN Darlington transistor
BC618 ,NPN Darlington transistor
BC635 ,High Current Transistors
BF2040 ,RF-MOSFETCharacteristicsParameter Symbol Values Unitmin. typ. max.DC
BF2040R ,RF-MOSFETCharacteristicsParameter Symbol Values Unitmin. typ. max.AC
BF2040W ,Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V)BF2040...Silicon N-Channel MOSFET Tetrode• For low noise , high gain controlled input stages up ..
