BC558BRL1 ,Amplifier Transistors
BC558C ,30 V, PNP silicon planar epitaxial transistorBC556/557/558/559/560BC556/557/558/559/560Switching and Amplifier• High Voltage: BC556, V = -65VCEO ..
BC558C ,30 V, PNP silicon planar epitaxial transistorAbsolute Maximum RatingsT = 25 °C, unless otherwise specifiedambParameter Test condition Part Symbo ..
BC558C ,30 V, PNP silicon planar epitaxial transistorBC556/557/558/559/560BC556/557/558/559/560Switching and Amplifier• High Voltage: BC556, V = -65VCEO ..
BC558C ,30 V, PNP silicon planar epitaxial transistorBC556/557/558/559/560BC556/557/558/559/560Switching and Amplifier• High Voltage: BC556, V = -65VCEO ..
BC558C ,30 V, PNP silicon planar epitaxial transistorBC556/557/558/559/560BC556/557/558/559/560Switching and Amplifier• High Voltage: BC556, V = -65VCEO ..
BF2030 ,RF-MOSFETCharacteristicsParameter Symbol Values Unitmin. typ. max.AC
BF2030R ,RF-MOSFETBF2030...Silicon N-Channel MOSFET Tetrode• For low noise, high gain controlled input stages up t ..
BF2030W ,RF-MOSFETCharacteristicsParameter Symbol Values Unitmin. typ. max.DC
BF2040 ,RF-MOSFETCharacteristicsParameter Symbol Values Unitmin. typ. max.DC
BF2040R ,RF-MOSFETCharacteristicsParameter Symbol Values Unitmin. typ. max.AC
BF2040W ,Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V)BF2040...Silicon N-Channel MOSFET Tetrode• For low noise , high gain controlled input stages up ..
BC557AZL1-BC558BRL1
Amplifier Transistors
