BC547 , 0.500W General Purpose NPN Plastic Leaded Transistor. 45V Vceo, 0.100A Ic, 110
BC547 , 0.500W General Purpose NPN Plastic Leaded Transistor. 45V Vceo, 0.100A Ic, 110Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified.Parameter Sy ..
BC547 , 0.500W General Purpose NPN Plastic Leaded Transistor. 45V Vceo, 0.100A Ic, 110
BC547 , 0.500W General Purpose NPN Plastic Leaded Transistor. 45V Vceo, 0.100A Ic, 110pin configuration TO-18.Mechanical Datamax. ∅ Case: TO-92 Plastic Package0.022 (0.55)Weight: approx ..
BC547A , 0.500W General Purpose NPN Plastic Leaded Transistor. 45V Vceo, 0.100A Ic, 110
BC547A , 0.500W General Purpose NPN Plastic Leaded Transistor. 45V Vceo, 0.100A Ic, 110
BF1005SR ,RF-MOSFETCharacteristicsParameter Symbol Values Unitmin. typ. max.DC
BF1005SR ,RF-MOSFETCharacteristics12 - - VDrain-source breakdown voltage V(BR)DSI = 650 µA, V = 0 , V = 0 D G1S G2S8 - ..
BF1009 ,Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 9 V Integrated stabilized bias network
BF1009 ,Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 9 V Integrated stabilized bias network
BF1009S ,Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 9V Integrated bias network)BF1009S...Silicon N_Channel MOSFET Tetrode• For low noise, high gain controlled input stage up to ..
BF1012 , Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 12V Integrated stabilized bias network
BC547
0.500W General Purpose NPN Plastic Leaded Transistor. 45V Vceo, 0.100A Ic, 110
