| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| BC547-C(TER1.T) |
TOSHIBA|TOSHIBA |
N/a |
2000 |
 |
|
BC547CTA ,NPN Epitaxial Silicon TransistorApplications• High Voltage: BC546, V =65VCEO• Low Noise: BC549, BC550• Complement to BC556 ... BC56 ..
BC548 ,Si-Epitaxial PlanarTransistorsMAXIMUM RATINGS23BC BC BCRating Symbol 546 547 548 UnitCASE 29–04, STYLE 17TO–92 (TO–226AA)Collecto ..
BC548A ,Si-Epitaxial PlanarTransistors
BC548A ,Si-Epitaxial PlanarTransistors
BC548A ,Si-Epitaxial PlanarTransistorsTHERMAL CHARACTERISTICSCharacteristic Symbol Max UnitThermal Resistance, Junction to Ambient R 200 ..
BF1100R ,Dual-gate MOS-FETsAPPLICATIONSPINNING• VHF and UHF
BF1100R ,Dual-gate MOS-FETsFEATURES and substrate interconnected and an internal bias circuit toensure good cross-modulation p ..
BF1100R ,Dual-gate MOS-FETsDISCRETE SEMICONDUCTORSDATA SHEETBF1100; BF1100RDual-gate MOS-FETs1995 Apr 25Product specificationFi ..
