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Partno Mfg Dc Qty AvailableDescript
BC546N/a900avaiSi-Epitaxial PlanarTransistors
BC547高科N/a100000avai 0.500W General Purpose NPN Plastic Leaded Transistor. 45V Vceo, 0.100A Ic, 110
BC547KECN/a26000avai 0.500W General Purpose NPN Plastic Leaded Transistor. 45V Vceo, 0.100A Ic, 110


BC547 , 0.500W General Purpose NPN Plastic Leaded Transistor. 45V Vceo, 0.100A Ic, 110
BC547 , 0.500W General Purpose NPN Plastic Leaded Transistor. 45V Vceo, 0.100A Ic, 110Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified.Parameter Sy ..
BC547 , 0.500W General Purpose NPN Plastic Leaded Transistor. 45V Vceo, 0.100A Ic, 110
BC547 , 0.500W General Purpose NPN Plastic Leaded Transistor. 45V Vceo, 0.100A Ic, 110pin configuration TO-18.Mechanical Datamax. ∅ Case: TO-92 Plastic Package0.022 (0.55)Weight: approx ..
BC547A , 0.500W General Purpose NPN Plastic Leaded Transistor. 45V Vceo, 0.100A Ic, 110
BC547A , 0.500W General Purpose NPN Plastic Leaded Transistor. 45V Vceo, 0.100A Ic, 110
BF1005SR ,RF-MOSFETCharacteristicsParameter Symbol Values Unitmin. typ. max.DC
BF1005SR ,RF-MOSFETCharacteristics12 - - VDrain-source breakdown voltage V(BR)DSI = 650 µA, V = 0 , V = 0 D G1S G2S8 - ..
BF1009 ,Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 9 V Integrated stabilized bias network
BF1009 ,Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 9 V Integrated stabilized bias network
BF1009S ,Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 9V Integrated bias network)BF1009S...Silicon N_Channel MOSFET Tetrode• For low noise, high gain controlled input stage up to ..
BF1012 , Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 12V Integrated stabilized bias network


BC546-BC547
Si-Epitaxial PlanarTransistors
BC546 thru BC548
Vishay Semiconductors
formerly General Semiconductor
Features

• NPN Silicon Epitaxial Planar Transistors
• These transistors are subdivided into three groups
A, B, and C according to their current gain.
The type BC546 is available in groups A and B,
however, the types BC547 and BC548 can be
supplied in all three groups. As complementary
types the PNP transistors BC556...BC558 are
recommended.
• On special request, these transistors are also
manufactured in the pin configuration TO-18.
Mechanical Data
Case:
TO-92 Plastic Package
Weight:
approx. 0.18g
Packaging Codes/Options:

E6/Bulk – 5K per container, 20K/box
E7/4K per Ammo mag., 20K/box
Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified.
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