BC449 ,V(ceo): 100V; V(cbo): 100V; V(ebo): 5V; voltage NPN silicon transistorELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)ACharacteristic Symbol Min Typ Max Unit ..
BC449 ,V(ceo): 100V; V(cbo): 100V; V(ebo): 5V; voltage NPN silicon transistorMAXIMUM RATINGS BC449, A, BRating Symbol BC BC BC UnitCASE 29-04, STYLE 17445 447 449Collector-Emit ..
BC487 ,NPN SILICON PLANAR EPITAXIAL TRANSISTORSELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)ACharacteristic Symbol Min Typ Max Unit ..
BC488BRL1 , High Current Transistors PNP Silicon
BC489BZL1 ,Transistor Silicon Plastic NPNELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (Continued)ACharacteristic Symbol Min ..
BC490A ,High Current TransistorsELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)ACharacteristic Symbol Min Typ Max Unit ..
BF1005 ,RF-MOSFETCharacteristicsParameter Symbol Values Unitmin. typ. max.DC
BF1005R ,RF-MOSFETBF1005...Silicon N-Channel MOSFET Tetrode• For low noise, high gain controlled input stages up to ..
BF1005S ,RF-MOSFETBF1005S...Silicon N-Channel MOSFET Tetrode• For low noise, high gain controlled input stages up t ..
BF1005SR ,RF-MOSFETCharacteristicsParameter Symbol Values Unitmin. typ. max.DC
BF1005SR ,RF-MOSFETCharacteristics12 - - VDrain-source breakdown voltage V(BR)DSI = 650 µA, V = 0 , V = 0 D G1S G2S8 - ..
BF1009 ,Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 9 V Integrated stabilized bias network
BC449
High Voltage Transistors
BC447, BC449, BC449A
High Voltage T ransistors
NPN Silicon
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
