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BC307B-BC308A Fast Delivery,Good Price
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Partno Mfg Dc Qty AvailableDescript
BC307BFSCN/a2060avai 0.350W General Purpose PNP Plastic Leaded Transistor. 45V Vceo, 0.100A Ic, 200
BC307BFAIRCHILDN/a775avai 0.350W General Purpose PNP Plastic Leaded Transistor. 45V Vceo, 0.100A Ic, 200
BC308AFSCN/a6475avai 1.000W General Purpose PNP Plastic Leaded Transistor. 25V Vceo, 0.100A Ic, 120
BC308AFairchildN/a15000avai 1.000W General Purpose PNP Plastic Leaded Transistor. 25V Vceo, 0.100A Ic, 120
BC308ANSN/a2000avai 1.000W General Purpose PNP Plastic Leaded Transistor. 25V Vceo, 0.100A Ic, 120


BC308A , 1.000W General Purpose PNP Plastic Leaded Transistor. 25V Vceo, 0.100A Ic, 120Applications• Low Noise: BC309TO-9211. Collector 2. Base 3. EmitterPNP Epitaxial Silicon Transi ..
BC308A , 1.000W General Purpose PNP Plastic Leaded Transistor. 25V Vceo, 0.100A Ic, 120BC307/308/309BC307/308/309Switching and Amplifier
BC308A , 1.000W General Purpose PNP Plastic Leaded Transistor. 25V Vceo, 0.100A Ic, 120Applications• Low Noise: BC309TO-9211. Collector 2. Base 3. EmitterPNP Epitaxial Silicon Transi ..
BC308B ,PNP EPITAXIAL SILICON TRANSISTORBC307/308/309BC307/308/309Switching and Amplifier
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BC307B-BC308A
PNP Epitaxial Silicon Transistor
BC307/308/309 BC307/308/309 Switching and Amplifier Applications • Low Noise: BC309 TO-92 1 1. Collector 2. Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted a Symbol Parameter Value Units V Collector-Emitter Voltage CES : BC307 -50 V : BC308/309 -30 V V Collector-Emitter Voltage CEO : BC307 -45 V : BC308/309 -25 V V Emitter-Base Voltage -5 V EBO I Collector Current (DC) -100 mA C P Collector Power Dissipation 500 mW C T Junction Temperature 150 °C J T Storage Temperature -55 ~ 150 °C STG ©2002 Rev. A2, August 2002
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