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Partno Mfg Dc Qty AvailableDescript
BC237BN/a30avai 0.350W General Purpose NPN Plastic Leaded Transistor. 45V Vceo, 0.100A Ic, 200
BC237BFairchildPHIN/a1200avai 0.350W General Purpose NPN Plastic Leaded Transistor. 45V Vceo, 0.100A Ic, 200
BC237BFSCN/a180avai 0.350W General Purpose NPN Plastic Leaded Transistor. 45V Vceo, 0.100A Ic, 200
BC237BFairchildN/a7300avai 0.350W General Purpose NPN Plastic Leaded Transistor. 45V Vceo, 0.100A Ic, 200
BC238BBUFSCN/a40000avaiNPN Epitaxial Silicon Transistor
BC238ANSCN/a746avai 0.350W General Purpose NPN Plastic Leaded Transistor. 25V Vceo, 0.100A Ic, 120
BC238AFairchildN/a5000avai 0.350W General Purpose NPN Plastic Leaded Transistor. 25V Vceo, 0.100A Ic, 120
BC238ANSN/a250avai 0.350W General Purpose NPN Plastic Leaded Transistor. 25V Vceo, 0.100A Ic, 120
BC238AFSCN/a33635avai 0.350W General Purpose NPN Plastic Leaded Transistor. 25V Vceo, 0.100A Ic, 120
BC239BTAFSCN/a38000avaiNPN Epitaxial Silicon Transistor
BC239BTAFAIRCHILDN/a17270avaiNPN Epitaxial Silicon Transistor


BC238BBU ,NPN Epitaxial Silicon TransistorApplications• Low Noise: BC239TO-921NPN Epitaxial Silicon Transistor 1. Collector 2. Base 3. Em ..
BC238C , 0.350W General Purpose NPN Plastic Leaded Transistor. 25V Vceo, 0.100A Ic, 380**Order this documentSEMICONDUCTOR TECHNICAL DATAby BC237/D *NPN SiliconCOLLECTOR12BASE3EMITTER1
BC238C , 0.350W General Purpose NPN Plastic Leaded Transistor. 25V Vceo, 0.100A Ic, 380THERMAL CHARACTERISTICSCharacteristic Symbol Max UnitThermal Resistance, Junction to Ambient R 357 ..
BC239BTA ,NPN Epitaxial Silicon TransistorBC237/238/239BC237/238/239Switching and Amplifier
BC239BTA ,NPN Epitaxial Silicon TransistorApplications• Low Noise: BC239TO-921NPN Epitaxial Silicon Transistor 1. Collector 2. Base 3. Em ..
BC256 ,AMPLIFIER TRANSISTORS PNP SILICONELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)c, Characteristic Type L Symbol J Min. ..
BDG1A16 , Quad Differential Drivers BDG1A, BDP1A, BDGLA, BPNGA, BPNPA, and BPPGA
BDG1A16E-TR , Quad Differential Drivers BDG1A, BDP1A, BDGLA, BPNGA, BPNPA, and BPPGA
BDG1A16NB , Quad Differential Drivers BDG1A, BDP1A, BDGLA, BPNGA, BPNPA, and BPPGA
BDGLA16G-TR , Quad Differential Drivers BDG1A, BDP1A, BDGLA, BPNGA, BPNPA, and BPPGA
BDP1A16G , Quad Differential Drivers BDG1A, BDP1A, BDGLA, BPNGA, BPNPA, and BPPGA
BDP1A16G , Quad Differential Drivers BDG1A, BDP1A, BDGLA, BPNGA, BPNPA, and BPPGA


BC237B-BC238A-BC238BBU-BC239BTA
NPN Epitaxial Silicon Transistor
BC237/238/239 BC237/238/239 Switching and Amplifier Applications • Low Noise: BC239 TO-92 1 NPN Epitaxial Silicon Transistor 1. Collector 2. Base 3. Emitter Absolute Maximum Ratings T =25°C unless otherwise noted a Symbol Parameter Value Units V Collector-Emitter Voltage : BC237 50 V CES : BC238/239 30 V V Collector-Emitter Voltage : BC237 45 V CEO : BC238/239 25 V V Emitter-Base Voltage : BC237 6 V EBO : BC238/239 5 V I Collector Current (DC) 100 mA C P Collector Power Dissipation 500 mW C T Junction Temperature 150 °C J T Storage Temperature -55 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted a Symbol Parameter Test Condition Min. Typ. Max. Units BV Collector-Emitter Breakdown Voltage CEO : BC237 I =2mA, I =0 45 V C B : BC238/239 25 V BV Emitter Base Breakdown Voltage EBO : BC237 I =1μA, I =0 6 V E C : BC238/239 5 V I Collector Cut-off Current CES : BC237 V =50V, V =0 0.2 15 nA CE BE : BC238/239 V =30V, V =0 0.2 15 nA CE BE h DC Current Gain V =5V, I =2mA 120 800 FE CE C V (sat) Collector-Emitter Saturation Voltage I =10mA, I =0.5mA 0.07 0.2 V CE C B I =100mA, I =5mA 0.2 0.6 V C B V (sat) Collector-Base Saturation Voltage I =10mA, I =0.5mA 0.73 0.83 V BE C B I =100mA, I =5mA 0.87 1.05 V C B V (on) Base-Emitter On Voltage V =5V, I =2mA 0.55 0.62 0.7 V BE CE C f Current Gain Bandwidth Product V =3V, I =0.5mA, f=100MHz 85 MHz T CE C V =5V, I =10mA, f=100MHz 150 250 MHz CE C C Output Capacitance V =10V, I =0, f=1MHz 3.5 6 pF ob CB E C Input Base Capacitance V =0.5V, I =0, f=1MHz 8 pF ib EB C NF Noise Figure V =5V, I =0.2mA, CE C : BC237/238 f=1KHz R =2KΩ 210 dB G : BC239 V =5V, I =0.2mA 4 dB CE C R =2KΩ, f=30~15KHz 4 dB : BC239 G h Classification FE Classification A B C h 120 ~ 220 180 ~ 460 380 ~ 800 FE ©2002 Rev. A2, August 2002
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