BC237 , 0.350W General Purpose NPN Plastic Leaded Transistor. 45V Vceo, 0.100A Ic, 120
BC237 , 0.350W General Purpose NPN Plastic Leaded Transistor. 45V Vceo, 0.100A Ic, 120
BC237 , 0.350W General Purpose NPN Plastic Leaded Transistor. 45V Vceo, 0.100A Ic, 120ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (Continued)ACharacteristic Symbol Min ..
BC237 , 0.350W General Purpose NPN Plastic Leaded Transistor. 45V Vceo, 0.100A Ic, 120
BC237B , 0.350W General Purpose NPN Plastic Leaded Transistor. 45V Vceo, 0.100A Ic, 200
BC237B , 0.350W General Purpose NPN Plastic Leaded Transistor. 45V Vceo, 0.100A Ic, 200Applications• Low Noise: BC239TO-921NPN Epitaxial Silicon Transistor 1. Collector 2. Base 3. Em ..
BD-E302RD , green chips, which are made from GaP on GaP substrate
BD-E302RD , green chips, which are made from GaP on GaP substrate
BDG1A16 , Quad Differential Drivers BDG1A, BDP1A, BDGLA, BPNGA, BPNPA, and BPPGA
BDG1A16E-TR , Quad Differential Drivers BDG1A, BDP1A, BDGLA, BPNGA, BPNPA, and BPPGA
BDG1A16NB , Quad Differential Drivers BDG1A, BDP1A, BDGLA, BPNGA, BPNPA, and BPPGA
BDGLA16G-TR , Quad Differential Drivers BDG1A, BDP1A, BDGLA, BPNGA, BPNPA, and BPPGA
BC237
Transistor Silicon NPN
Amplifier T ransistors
NPN Silicon
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
OFF CHARACTERISTICSCOLLECTOR
BASE
EMITTER
