IC Phoenix
 
Home ›  BB9 > BC214LC,PNP General Purpose Amplifier
BC214LC Fast Delivery,Good Price
Part Number:
If you need More Quantity or Better Price,Welcom Any inquiry.
We available via phone +865332716050 Email
Partno Mfg Dc Qty AvailableDescript
BC214LCFSCN/a390avaiPNP General Purpose Amplifier


BC214LC ,PNP General Purpose AmplifierBC214LCBC214LCPNP General Purpose Amplifier This device is deisgned for use as general purpose amp ..
BC214RL1 ,Amplifier Transistor PNPELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)ACharacteristic Symbol Min Typ Max Unit ..
BC237 , 0.350W General Purpose NPN Plastic Leaded Transistor. 45V Vceo, 0.100A Ic, 120
BC237 , 0.350W General Purpose NPN Plastic Leaded Transistor. 45V Vceo, 0.100A Ic, 120
BC237 , 0.350W General Purpose NPN Plastic Leaded Transistor. 45V Vceo, 0.100A Ic, 120ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (Continued)ACharacteristic Symbol Min ..
BC237 , 0.350W General Purpose NPN Plastic Leaded Transistor. 45V Vceo, 0.100A Ic, 120
BD-C535RD , DUAL DIGIT LED DISPLAYS
BD-C542RD , green chips, which are made from GaP on GaP substrate
BD-C542RD , green chips, which are made from GaP on GaP substrate
BD-E302RD , green chips, which are made from GaP on GaP substrate
BD-E302RD , green chips, which are made from GaP on GaP substrate
BDG1A16 , Quad Differential Drivers BDG1A, BDP1A, BDGLA, BPNGA, BPNPA, and BPPGA


BC214LC
PNP General Purpose Amplifier
BC214LC BC214LC PNP General Purpose Amplifier  This device is deisgned for use as general purpose amplifiers and switches requiring collector currents to 300mA.  Sourced from process 68. TO-92 1 1. Emitter 2. Collector 3. Base Absolute Maximum Ratings* T =25°C unless otherwise noted a Symbol Parameter Value Units V Collector-Emitter Voltage -30 V CEO V Collector-Base Voltage -45 V CBO V Emitter-Base Voltage -5.0 V EBO I Collector Current (DC)- - Continuous -500 mA C T , T Operating and Storage Junction Temperature Range - 55 ~ 150 °C J STG * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations Electrical Characteristics T =25°C unless otherwise noted a Symbol Parameter Test Condition Min. Max. Units Off Characteristics V Collector-Emitter Voltage I = -2mA, I = 0 -30 V (BR)CEO C B V Collector-Base Voltage I = -10μA, I = 0 -45 V (BR)CBO C E V Emitter-Base Voltage I = -10μA, I = 0 -5.0 V (BR)EBO E C I Collector Cut-off Current V = -30V, I = 0 -15 nA CBO CB E I Emitter Cut-off Current V = -4V, I = 0 -15 nA EBO EB C On Characteristics * h DC Current Gain V = -5V, I = -2mA 140 400 FE CE C V (sat) Collector-Emitter Saturation Voltage I = -10mA, I = -0.5mA -0.25 V CE C B I = -100mA, I = -5mA -0.6 C B V (sat) Base-Emitter Saturation Voltage I = -100mA, I = -5mA -1.1 V BE C B V (on) Base-Emitter On Voltage V = -5V, I = -2mA -0.6 -0.72 V BE CE C Small Signal Characteristics f Current gain Bandwidth Product V = -5V, I = -10mA 200 MHz T CE C f = 100MHz NF Noise Figure V = -5V, I = -200μA 2.0 dB CE C R = 2kΩ, f = 15.7KHz G h Small Signal Current Gain I = -2mA, V = -5V 350 600 fe C CE f = 1KHz C Output Capacitance V = -10V, f = 1MHz 10 pF OB CB * Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2.0% ©2003 Rev. A, October 2003
ic,good price


TEL:86-533-2716050      FAX:86-533-2716790
   

©2020 IC PHOENIX CO.,LIMITED