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BC182LFAIRCHILDN/a909avaiNPN General Purpose Amplifer
BC182LNSN/a315avaiNPN General Purpose Amplifer
BC182LPhilipsN/a10000avaiNPN General Purpose Amplifer


BC182L ,NPN General Purpose AmpliferBC182LBC182LNPN General Purpose Amplifier• This device is designed for general purpose amplifier ap ..
BC182L ,NPN General Purpose AmpliferBC182LBC182LNPN General Purpose Amplifier• This device is designed for general purpose amplifier ap ..
BC182L ,NPN General Purpose AmpliferBC182LBC182LNPN General Purpose Amplifier• This device is designed for general purpose amplifier ap ..
BC182LB ,NPN General purpose AmplifierBC182LBBC182LBNPN General Purpose Amplifier• This device is designed for general purpose amplifier ..
BC182LB ,NPN General purpose AmplifierBC182LBBC182LBNPN General Purpose Amplifier• This device is designed for general purpose amplifier ..
BC182L-B ,NPN General purpose AmplifierBC182LBBC182LBNPN General Purpose Amplifier• This device is designed for general purpose amplifier ..
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BC182L
NPN General Purpose Amplifer
BC182L BC182L NPN General Purpose Amplifier • This device is designed for general purpose amplifier application at collector currents to 100mA. • Sourced from process 10. TO-92 1 1. Emitter 2. Collector 3. Base Absolute Maximum Ratings T =25°C unless otherwise noted C Symbol Parameter Value Units V Collector-Emitter Voltage 50 V CEO V Collector-Base Voltage 60 V CBO V Emitter-Base Voltage 6 V EBO I Collector Current - Continuous 100 mA C T T Storage Junction Temperature Range - 55 ~ 150 °C J, STG Electrical Characteristics T =25°C unless otherwise noted C Symbol Parameter Test Condition Min. Typ. Max. Units Off Characteristics V Collector-Emitter Breakdown Voltage I = 2mA, I = 0 50 V (BR)CEO C B V Collector-Base Breakdown Voltage I = 10μA, I = 0 60 V (BR)CBO C E V Emitter-Base Breakdown Voltage I = 100μA, I = 0 6 V (BR)EBO E C I Collector Cut-off Current V = 50V, V = 0 15 nA CBO CB BE I Emitter-Base Leakage Current V = 4V, I = 0 15 nA EBO EB E On Characteristics h DC Current Gain V = 5V, I = 10μA 40 FE CE C V = 5V, I = 2mA 120 500 CE C V = 5V, I = 100mA 80 CE C V (sat) Collector-Emitter Saturation Voltage I = 10mA, I = 0.5mA 0.25 V CE C B I = 100mA, I = 5mA 0.6 C B V (sat) Base-Emitter Saturation Voltage I = 100mA, I = 5mA 1.2 V BE C B V (on) Base-Emitter On Voltage V = 5V, I = 2mA 0.55 0.7 V BE CE C Dynamic Characteristics f Current Gain Bandwidth Product V = 5V, I = 10mA, f = 100MHz 150 MHz T CE C C Output Capacitance V = 10V, I = 0, f = 1MHz 5 pF ob CE C h Small Signal Current Gain V = 5V, I = 2mA, f = 1KHz 240 500 fe CE C NF Noise Figure V = 5V, I = 0.2mA 10 dB CE C R = 2KΩ, f = 1KHz, BW = 200Hz S Thermal Characteristics T =25°C unless otherwise noted A Symbol Parameter Max. Units P Total Device Dissipation @T =25°C 350 mW D A Derate above 25°C 2.8 mW/°C R Thermal Resistance, Junction to Ambient 357 mW/°C θJA R Thermal Resistance, Junction to Case 125 °C/W θJC ©2002 Rev. A, October 2002
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