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BC182LB-BC182L-B
NPN General purpose Amplifier
BC182LB BC182LB NPN General Purpose Amplifier • This device is designed for general purpose amplifier application at collector currents to 100mA. • Sourced from process 10. TO-92 1 1. Emitter 2. Collector 3. Base Absolute Maximum Ratings T =25°C unless otherwise noted C Symbol Parameter Value Units V Collector-Emitter Voltage 50 V CEO V Collector-Base Voltage 60 V CBO V Emitter-Base Voltage 6 V EBO I Collector Current - Continuous 100 mA C T T Storage Junction Temperature Range - 55 ~ 150 °C J, STG Electrical Characteristics T =25°C unless otherwise noted C Symbol Parameter Test Condition Min. Typ. Max. Units Off Characteristics V Collector-Emitter Breakdown Voltage I = 2mA, I = 0 50 V (BR)CEO C B V Collector-Base Breakdown Voltage I = 10μA, I = 0 60 V (BR)CBO C E V Emitter-Base Breakdown Voltage I = 100μA, I = 0 6 V (BR)EBO E C I Collector Cut-off Current V = 50V, V = 0 15 nA CBO CB BE I Emitter-Base Leakage Current V = 4V, I = 0 15 nA EBO EB E On Characteristics h DC Current Gain V = 5V, I = 10μA 40 FE CE C V = 5V, I = 100mA 80 CE C V (sat) Collector-Emitter Saturation Voltage I = 10mA, I = 0.5mA 0.25 V CE C B I = 100mA, I = 5mA 0.6 C B V (sat) Base-Emitter Saturation Voltage I = 100mA, I = 5mA 1.2 V BE C B V (on) Base-Emitter On Voltage V = 5V, I = 2mA 0.55 0.7 V BE CE C Dynamic Characteristics f Current Gain Bandwidth Product V = 5V, I = 10mA, f = 100MHz 150 MHz T CE C C Output Capacitance V = 10V, I = 0, f = 1MHz 5 pF ob CE C h Small Signal Current Gain V = 5V, I = 2mA, f = 1KHz 240 500 fe CE C NF Noise Figure V = 5V, I = 0.2mA 10 dB CE C R = 2KΩ, f = 1KHz, BW = 200Hz S ©2002 Rev. A1, August 2002
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