BBY58-06W ,VaractordiodesBBY58...Silicon Tuning Diodes• Excellent linearity• High Q hyperabrupt tuning diode• Low series ..
BBY59-02V ,Latest Silicon DiscretesCharacteristics at T = 25°C, unless otherwise specifiedAParameter Symbol Values Unitmin. typ. max.D ..
BBY59-02V ,Latest Silicon DiscretesBBY59...Silicon Tuning Diode
BBY58-02V-BBY58-03W-BBY58-05W-BBY58-06W
Varactordiodes
BBY58...
Silicon Tuning Diodes• Excellent linearity
• High Q hyperabrupt tuning diode
• Low series resistance
• Designed for low tuning voltage operation
for VCO's in mobile communications equipment
• For low frequency control elements
such as TCXOs and VCXOs
• Very low capacitance spread
BBY58-02L/V
BBY58-02W
BBY58-03W
BBY58-05WBBY58-07L4BBY58-06W*Preliminary
Maximum Ratings at TA = 25°C, unless otherwise specified
BBY58...
Electrical Characteristics at TA = 25°C, unless otherwise specified
DC Characteristics
AC Characteristics
BBY58...
Diode capacitance CT = ƒ (VR)
f = 1MHz
12
16
20
24
32
Normalized diode capacitance (TA)/C(25°C)= ƒ(TA)
f = 1MHz, VR = Parameter
0.95
0.96
0.97
0.98
0.99
1.01
1.02
1.03
1.05
Temperature coefficient of the diode
capacitance TCc = ƒ (VR)
-4 10
-3 10
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