Partno |
Mfg |
Dc |
Qty |
Available | Descript |
BBY58-023W E6327 |
INF |
N/a |
1289 |
|
|
BBY58-02V ,VaractordiodesCharacteristics at T = 25°C, unless otherwise specifiedAParameter Symbol Values Unitmin. typ. max.D ..
BBY58-03W ,Silicon Tuning Diode (Excellent linearity High Q hyperabrupt tuning diode Low series inductance)BBY58...Silicon Tuning Diodes• Excellent linearity• High Q hyperabrupt tuning diode• Low series ..
BBY58-05W ,VaractordiodesCharacteristicsReverse current I nARV = 8 V - - 10RV = 8 V, T = 85 °C - - 100R AAC
BBY58-06W ,VaractordiodesBBY58...Silicon Tuning Diodes• Excellent linearity• High Q hyperabrupt tuning diode• Low series ..
BBY59-02V ,Latest Silicon DiscretesCharacteristics at T = 25°C, unless otherwise specifiedAParameter Symbol Values Unitmin. typ. max.D ..
BD941F , SILICON EPITAXIAL BASE POWER TRANSISTORS
BD941F , SILICON EPITAXIAL BASE POWER TRANSISTORS
BD950 , NPN PLASTIC POWER TRANSISTORS